Two-dimensional Layered Materials for Artificial Synapse

Yen Yu Chen; Chih Pin Hsu; Pang Shiuan Liu; Tuo Hung Hou

doi:10.1109/VLSI-TSA48913.2020.9203753

Two-dimensional Layered Materials for Artificial Synapse

Yen Yu Chen, Chih Pin Hsu, Pang Shiuan Liu, Tuo Hung Hou^*

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We discuss the unique opportunities of introducing emerging two-dimensional (2D) materials as the fundamental building blocks for neuromorphic computing, namely synaptic devices, because of their remarkable scalability, transferability, flexibility, and photosensitivity. The 2D synaptic devices based on various mechanisms including charge storage, resistive switching and ferroelectricity are reviewed and compared. Additionally, the new research forefront on optical synaptic devices is introduced.

Original language	English
Title of host publication	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	141-142
Number of pages	2
ISBN (Electronic)	9781728142326
DOIs	https://doi.org/10.1109/VLSI-TSA48913.2020.9203753
State	Published - Aug 2020
Event	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan Duration: 10 Aug 2020 → 13 Aug 2020

Publication series

Name	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Country/Territory	Taiwan
City	Hsinchu
Period	10/08/20 → 13/08/20

Access to Document

10.1109/VLSI-TSA48913.2020.9203753

Cite this

Chen, Y. Y., Hsu, C. P., Liu, P. S., & Hou, T. H. (2020). Two-dimensional Layered Materials for Artificial Synapse. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 (pp. 141-142). Article 9203753 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA48913.2020.9203753

Chen, Yen Yu ; Hsu, Chih Pin ; Liu, Pang Shiuan et al. / Two-dimensional Layered Materials for Artificial Synapse. 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 141-142 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

@inproceedings{04e9dbd5cbcb4bc3b82dba77658d4418,

title = "Two-dimensional Layered Materials for Artificial Synapse",

abstract = "We discuss the unique opportunities of introducing emerging two-dimensional (2D) materials as the fundamental building blocks for neuromorphic computing, namely synaptic devices, because of their remarkable scalability, transferability, flexibility, and photosensitivity. The 2D synaptic devices based on various mechanisms including charge storage, resistive switching and ferroelectricity are reviewed and compared. Additionally, the new research forefront on optical synaptic devices is introduced.",

author = "Chen, {Yen Yu} and Hsu, {Chih Pin} and Liu, {Pang Shiuan} and Hou, {Tuo Hung}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 ; Conference date: 10-08-2020 Through 13-08-2020",

year = "2020",

month = aug,

doi = "10.1109/VLSI-TSA48913.2020.9203753",

language = "English",

series = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "141--142",

booktitle = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",

address = "美國",

}

Chen, YY, Hsu, CP, Liu, PS & Hou, TH 2020, Two-dimensional Layered Materials for Artificial Synapse. in 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020., 9203753, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Institute of Electrical and Electronics Engineers Inc., pp. 141-142, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Hsinchu, Taiwan, 10/08/20. https://doi.org/10.1109/VLSI-TSA48913.2020.9203753

Two-dimensional Layered Materials for Artificial Synapse. / Chen, Yen Yu; Hsu, Chih Pin; Liu, Pang Shiuan et al.
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 141-142 9203753 (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Two-dimensional Layered Materials for Artificial Synapse

AU - Chen, Yen Yu

AU - Hsu, Chih Pin

AU - Liu, Pang Shiuan

AU - Hou, Tuo Hung

PY - 2020/8

Y1 - 2020/8

N2 - We discuss the unique opportunities of introducing emerging two-dimensional (2D) materials as the fundamental building blocks for neuromorphic computing, namely synaptic devices, because of their remarkable scalability, transferability, flexibility, and photosensitivity. The 2D synaptic devices based on various mechanisms including charge storage, resistive switching and ferroelectricity are reviewed and compared. Additionally, the new research forefront on optical synaptic devices is introduced.

AB - We discuss the unique opportunities of introducing emerging two-dimensional (2D) materials as the fundamental building blocks for neuromorphic computing, namely synaptic devices, because of their remarkable scalability, transferability, flexibility, and photosensitivity. The 2D synaptic devices based on various mechanisms including charge storage, resistive switching and ferroelectricity are reviewed and compared. Additionally, the new research forefront on optical synaptic devices is introduced.

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DO - 10.1109/VLSI-TSA48913.2020.9203753

M3 - Conference contribution

AN - SCOPUS:85093654606

T3 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

SP - 141

EP - 142

BT - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Y2 - 10 August 2020 through 13 August 2020

ER -

Chen YY, Hsu CP, Liu PS, Hou TH. Two-dimensional Layered Materials for Artificial Synapse. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 141-142. 9203753. (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020). doi: 10.1109/VLSI-TSA48913.2020.9203753

Two-dimensional Layered Materials for Artificial Synapse

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