Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy

Z. A. Su; J. H. Huang; L. Z. Hsieh; Wei-I Lee

doi:10.1063/1.121240

Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy

Z. A. Su^*, J. H. Huang, L. Z. Hsieh, Wei-I Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The precipitation of arsenic in superlattice structures of alternately undoped and [Be]=2.4×10¹⁹ cm^-3 doped GaAs grown at low temperatures has been studied using transmission electron microscopy. Novel precipitate microstructures were observed in annealed samples, including preferential accumulation of precipitates toward each interface of Be-doped GaAs and the following grown undoped GaAs. Specifically, after 800°C annealing, the precipitates are totally confined in Be-doped regions, forming two-dimensional dot arrays near the aforementioned interfaces. Data are also presented to show that the heavily Be-doped GaAs has a smaller lattice constant than the undoped GaAs. A strain-induced mechanism was proposed to account for the segregation of As clusters.

Original language	English
Pages (from-to)	1984-1986
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	16
DOIs	https://doi.org/10.1063/1.121240
State	Published - 1 Dec 1998

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title = "Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy",

abstract = "The precipitation of arsenic in superlattice structures of alternately undoped and [Be]=2.4×1019 cm-3 doped GaAs grown at low temperatures has been studied using transmission electron microscopy. Novel precipitate microstructures were observed in annealed samples, including preferential accumulation of precipitates toward each interface of Be-doped GaAs and the following grown undoped GaAs. Specifically, after 800°C annealing, the precipitates are totally confined in Be-doped regions, forming two-dimensional dot arrays near the aforementioned interfaces. Data are also presented to show that the heavily Be-doped GaAs has a smaller lattice constant than the undoped GaAs. A strain-induced mechanism was proposed to account for the segregation of As clusters.",

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T1 - Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy

AU - Su, Z. A.

AU - Huang, J. H.

AU - Hsieh, L. Z.

AU - Lee, Wei-I

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The precipitation of arsenic in superlattice structures of alternately undoped and [Be]=2.4×1019 cm-3 doped GaAs grown at low temperatures has been studied using transmission electron microscopy. Novel precipitate microstructures were observed in annealed samples, including preferential accumulation of precipitates toward each interface of Be-doped GaAs and the following grown undoped GaAs. Specifically, after 800°C annealing, the precipitates are totally confined in Be-doped regions, forming two-dimensional dot arrays near the aforementioned interfaces. Data are also presented to show that the heavily Be-doped GaAs has a smaller lattice constant than the undoped GaAs. A strain-induced mechanism was proposed to account for the segregation of As clusters.

AB - The precipitation of arsenic in superlattice structures of alternately undoped and [Be]=2.4×1019 cm-3 doped GaAs grown at low temperatures has been studied using transmission electron microscopy. Novel precipitate microstructures were observed in annealed samples, including preferential accumulation of precipitates toward each interface of Be-doped GaAs and the following grown undoped GaAs. Specifically, after 800°C annealing, the precipitates are totally confined in Be-doped regions, forming two-dimensional dot arrays near the aforementioned interfaces. Data are also presented to show that the heavily Be-doped GaAs has a smaller lattice constant than the undoped GaAs. A strain-induced mechanism was proposed to account for the segregation of As clusters.

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M3 - Article

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SP - 1984

EP - 1986

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy

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