TY - JOUR
T1 - Two-channel Kondo effects in Al/ AlOx /Sc planar tunnel junctions
AU - Yeh, Sheng-Shiuan
AU - Lin, Juhn-Jong
PY - 2009/1/5
Y1 - 2009/1/5
N2 - We have measured the differential conductances G (V,T) in several Al/ AlOx /Sc planar tunnel junctions between 2 and 35 K. As the temperature decreases to ∼16̃K, the zero-bias conductance G (0,T) crosses over from a standard -lnT dependence to a novel -T dependence. Correspondingly, the finite bias conductance G (V,T) reveals a two-channel Kondo scaling behavior between ∼4 and 16 K. The observed two-channel Kondo physics is ascribed to originating from a few localized spin- 1 2 Sc atoms situated slightly inside the AlOx /Sc interface.
AB - We have measured the differential conductances G (V,T) in several Al/ AlOx /Sc planar tunnel junctions between 2 and 35 K. As the temperature decreases to ∼16̃K, the zero-bias conductance G (0,T) crosses over from a standard -lnT dependence to a novel -T dependence. Correspondingly, the finite bias conductance G (V,T) reveals a two-channel Kondo scaling behavior between ∼4 and 16 K. The observed two-channel Kondo physics is ascribed to originating from a few localized spin- 1 2 Sc atoms situated slightly inside the AlOx /Sc interface.
UR - http://www.scopus.com/inward/record.url?scp=60949112391&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.79.012411
DO - 10.1103/PhysRevB.79.012411
M3 - Article
AN - SCOPUS:60949112391
SN - 1098-0121
VL - 79
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 1
M1 - 012411
ER -