Two-bit lanthanum oxide trapping layer nonvolatile flash memory

Yu Hsien Lin*, Chao-Hsin Chien, Tsung Yuan Yang, Tan Fu Lei

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    48 Scopus citations


    This paper describes the two-bit characteristics of SONOS-type memories prepared using lanthanum oxide, a high- k dielectric material, as the trapping layers. We used "channel hot-electron injection" for programming and "band-to-band hot-hole injection" for erasing to perform the memory operations. We observed large memory windows, a relatively high P/E speed, and good retention characteristics for these SONOS-type memories. It appears that La2 O3 is an excellent candidate for use as the trapping layer in SONOS-type memories.

    Original languageEnglish
    Pages (from-to)H619-H622
    JournalJournal of the Electrochemical Society
    Issue number7
    StatePublished - 2007


    Dive into the research topics of 'Two-bit lanthanum oxide trapping layer nonvolatile flash memory'. Together they form a unique fingerprint.

    Cite this