@inproceedings{c4284b18094c40b18fd27f6964f60c4a,
title = "Tunnel Thin-Film Transistor Featuring Ferroelectric Gate Stack for Synaptic Applications",
abstract = "The tunnel thin-film transistor (tunnel-TFT) with polycrystalline-silicon (poly-Si) channel and ferroelectric gate dielectric HfZrOx is fabricated to demonstrate the synaptic characteristics of potentiation and depression in conductance (Gd). Compared to conventional ferroelectric TFT (Fe-TFT), the ferroelectric tunnel-TFT exhibits much lower conduction current and Gd due to its unique carrier transport mechanism: interband tunneling. The low conduction current and Gd of ferroelectric tunnel-TFT can effectively reduce the power dissipation of neuromorphic computing circuits. Consequently, the ferroelectric tunnel-TFT is demonstrated to exhibit a 5-bit function, low asymmetry, and high Gd ratio to meet the requirement of a high recognition rate of neuromorphic computing.",
author = "Ma, {William Cheng Yu} and Su, {Chun Jung} and Kao, {Kuo Hsing} and Cho, {Ta Chun} and Guo, {Jing Qiang} and Wu, {Cheng Jun} and Wu, {Po Ying} and Hung, {Jia Yuan}",
note = "Publisher Copyright: {\textcopyright} 2023 FTFMD.; 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 ; Conference date: 04-07-2023 Through 07-07-2023",
year = "2023",
language = "English",
series = "30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "154--156",
booktitle = "30th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "美國",
}