Tunable EOT Scaling Down to 0.55 nm for HfO2-Based Gate-Stacks on Ge Substrate by In Situ H2 Plasma Treatment

Hui Hsuan Li; Shang Chiun Chen; Yu Hsien Lin; Chao Hsin Chien

doi:10.1149/2162-8777/ad430a

Tunable EOT Scaling Down to 0.55 nm for HfO₂-Based Gate-Stacks on Ge Substrate by In Situ H₂ Plasma Treatment

Hui Hsuan Li^*, Shang Chiun Chen, Yu Hsien Lin^*, Chao Hsin Chien^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We propose a continuous fabrication method for HfO₂-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor capacitor (pMOSCAP) with HfGeO_x interfacial layer by H₂ plasma treatment through in situ plasma-enhanced atomic layer deposition. The electrical characteristics showed that the proper hydrogen plasma treatment could obtain an aggressively scaled equivalent oxide thickness of approximately 0.55 nm and a relatively low gate leakage current of 8 × 10⁻⁴ A cm⁻² under PMA 500 °C.

Original language	English
Article number	055001
Journal	ECS Journal of Solid State Science and Technology
Volume	13
Issue number	5
DOIs	https://doi.org/10.1149/2162-8777/ad430a
State	Published - May 2024

Keywords

H plasma treatment
Hf-GeOx
germanium
germanium oxide (GeOx)
in-situ
pMOSCAP
plasma-enhanced atomic layer deposition (PEALD)

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10.1149/2162-8777/ad430a

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title = "Tunable EOT Scaling Down to 0.55 nm for HfO2-Based Gate-Stacks on Ge Substrate by In Situ H2 Plasma Treatment",

abstract = "We propose a continuous fabrication method for HfO2-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor capacitor (pMOSCAP) with HfGeOx interfacial layer by H2 plasma treatment through in situ plasma-enhanced atomic layer deposition. The electrical characteristics showed that the proper hydrogen plasma treatment could obtain an aggressively scaled equivalent oxide thickness of approximately 0.55 nm and a relatively low gate leakage current of 8 × 10−4 A cm−2 under PMA 500 °C.",

keywords = "H plasma treatment, Hf-GeOx, germanium, germanium oxide (GeOx), in-situ, pMOSCAP, plasma-enhanced atomic layer deposition (PEALD)",

author = "Li, {Hui Hsuan} and Chen, {Shang Chiun} and Lin, {Yu Hsien} and Chien, {Chao Hsin}",

note = "Publisher Copyright: {\textcopyright} 2024 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.",

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doi = "10.1149/2162-8777/ad430a",

language = "English",

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T1 - Tunable EOT Scaling Down to 0.55 nm for HfO2-Based Gate-Stacks on Ge Substrate by In Situ H2 Plasma Treatment

AU - Li, Hui Hsuan

AU - Chen, Shang Chiun

AU - Lin, Yu Hsien

AU - Chien, Chao Hsin

PY - 2024/5

Y1 - 2024/5

N2 - We propose a continuous fabrication method for HfO2-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor capacitor (pMOSCAP) with HfGeOx interfacial layer by H2 plasma treatment through in situ plasma-enhanced atomic layer deposition. The electrical characteristics showed that the proper hydrogen plasma treatment could obtain an aggressively scaled equivalent oxide thickness of approximately 0.55 nm and a relatively low gate leakage current of 8 × 10−4 A cm−2 under PMA 500 °C.

AB - We propose a continuous fabrication method for HfO2-based gate stacks on a Ge bulk p-type metal-oxide-semiconductor capacitor (pMOSCAP) with HfGeOx interfacial layer by H2 plasma treatment through in situ plasma-enhanced atomic layer deposition. The electrical characteristics showed that the proper hydrogen plasma treatment could obtain an aggressively scaled equivalent oxide thickness of approximately 0.55 nm and a relatively low gate leakage current of 8 × 10−4 A cm−2 under PMA 500 °C.

KW - H plasma treatment

KW - Hf-GeOx

KW - germanium

KW - germanium oxide (GeOx)

KW - in-situ

KW - pMOSCAP

KW - plasma-enhanced atomic layer deposition (PEALD)

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DO - 10.1149/2162-8777/ad430a

M3 - Article

AN - SCOPUS:85192961152

SN - 2162-8769

VL - 13

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 5

M1 - 055001

ER -

Tunable EOT Scaling Down to 0.55 nm for HfO₂-Based Gate-Stacks on Ge Substrate by In Situ H₂ Plasma Treatment

Abstract

Keywords

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