Tc enhancement by low energy electron irradiation and the influence of chain disorder on resistivity and Hall coefficient in YBa2Cu3O7 thin films

Sergey K. Tolpygo; Jiunn-Yuan Lin; M. Gurvitch; S. Y. Hou; Julia M. Phillips

doi:10.1016/0921-4534(96)00450-9

T_c enhancement by low energy electron irradiation and the influence of chain disorder on resistivity and Hall coefficient in YBa₂Cu₃O₇ thin films

Sergey K. Tolpygo^*, Jiunn-Yuan Lin, M. Gurvitch, S. Y. Hou, Julia M. Phillips

^*Corresponding author for this work

Institute of Physics

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13 Scopus citations

Abstract

The effect of electron irradiation with incident energy (E ≤ 40 keV) lower than the threshold for displacement of in-plane atoms on T_c, resistivity and Hall coefficient has been studied on fully oxygenated YBa₂Cu₃O_7-δ tin films. In contrast to the known T_c suppression at high-energy particle irradiation, an increase in T_c has been found as well as a factor of two increase in both the T-linear resistivity slope and the Hall coefficient as a function of radiation fluence. It has been shown that the changes observed in transport properties can be explained as being caused by disruption of the conductivity of CuO chains by radiation-induced chain oxygen defects.

Original language	English
Pages (from-to)	207-219
Number of pages	13
Journal	Physica C: Superconductivity and its applications
Volume	269
Issue number	3-4
DOIs	https://doi.org/10.1016/0921-4534(96)00450-9
State	Published - 1 Oct 1996

Keywords

Electrical resistivity
Hall effect
Irradiation effect
Normal-state properties
Thin films

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10.1016/0921-4534(96)00450-9

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title = "Tc enhancement by low energy electron irradiation and the influence of chain disorder on resistivity and Hall coefficient in YBa2Cu3O7 thin films",

abstract = "The effect of electron irradiation with incident energy (E ≤ 40 keV) lower than the threshold for displacement of in-plane atoms on Tc, resistivity and Hall coefficient has been studied on fully oxygenated YBa2Cu3O7-δ tin films. In contrast to the known Tc suppression at high-energy particle irradiation, an increase in Tc has been found as well as a factor of two increase in both the T-linear resistivity slope and the Hall coefficient as a function of radiation fluence. It has been shown that the changes observed in transport properties can be explained as being caused by disruption of the conductivity of CuO chains by radiation-induced chain oxygen defects.",

keywords = "Electrical resistivity, Hall effect, Irradiation effect, Normal-state properties, Thin films",

author = "Tolpygo, {Sergey K.} and Jiunn-Yuan Lin and M. Gurvitch and Hou, {S. Y.} and Phillips, {Julia M.}",

year = "1996",

month = oct,

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doi = "10.1016/0921-4534(96)00450-9",

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journal = "Physica C: Superconductivity and its Applications",

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number = "3-4",

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T_c enhancement by low energy electron irradiation and the influence of chain disorder on resistivity and Hall coefficient in YBa₂Cu₃O₇ thin films. / Tolpygo, Sergey K.; Lin, Jiunn-Yuan; Gurvitch, M. et al.
In: Physica C: Superconductivity and its applications, Vol. 269, No. 3-4, 01.10.1996, p. 207-219.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Tc enhancement by low energy electron irradiation and the influence of chain disorder on resistivity and Hall coefficient in YBa2Cu3O7 thin films

AU - Tolpygo, Sergey K.

AU - Lin, Jiunn-Yuan

AU - Gurvitch, M.

AU - Hou, S. Y.

AU - Phillips, Julia M.

PY - 1996/10/1

Y1 - 1996/10/1

N2 - The effect of electron irradiation with incident energy (E ≤ 40 keV) lower than the threshold for displacement of in-plane atoms on Tc, resistivity and Hall coefficient has been studied on fully oxygenated YBa2Cu3O7-δ tin films. In contrast to the known Tc suppression at high-energy particle irradiation, an increase in Tc has been found as well as a factor of two increase in both the T-linear resistivity slope and the Hall coefficient as a function of radiation fluence. It has been shown that the changes observed in transport properties can be explained as being caused by disruption of the conductivity of CuO chains by radiation-induced chain oxygen defects.

AB - The effect of electron irradiation with incident energy (E ≤ 40 keV) lower than the threshold for displacement of in-plane atoms on Tc, resistivity and Hall coefficient has been studied on fully oxygenated YBa2Cu3O7-δ tin films. In contrast to the known Tc suppression at high-energy particle irradiation, an increase in Tc has been found as well as a factor of two increase in both the T-linear resistivity slope and the Hall coefficient as a function of radiation fluence. It has been shown that the changes observed in transport properties can be explained as being caused by disruption of the conductivity of CuO chains by radiation-induced chain oxygen defects.

KW - Electrical resistivity

KW - Hall effect

KW - Irradiation effect

KW - Normal-state properties

KW - Thin films

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U2 - 10.1016/0921-4534(96)00450-9

DO - 10.1016/0921-4534(96)00450-9

M3 - Article

AN - SCOPUS:0030263906

SN - 0921-4534

VL - 269

SP - 207

EP - 219

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - 3-4

ER -

T_c enhancement by low energy electron irradiation and the influence of chain disorder on resistivity and Hall coefficient in YBa₂Cu₃O₇ thin films

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Keywords

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