Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing

T. C. Chang; Y. S. Mor; Po-Tsun Liu; T. M. Tsai; C. W. Chen; C. J. Chu; Fu-Ming Pan; W. Lur; S. M. Szeb

doi:10.1149/1.1504456

Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing

T. C. Chang^*, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, C. J. Chu, Fu-Ming Pan, W. Lur, S. M. Szeb

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The dielectric properties of organic-porous silica films deteriorate after photoresist removal processing. O₂ plasma ashing has been commonly used to remove photoresist. Nevertheless, the O₂ plasma will destroy the functional groups and induce moisture uptake in porous silica films. In this study, trimethylchlorosilane (TMCS) is used to repair the damage to porous silica caused by the O₂ plasma ashing process. The leakage current and dielectric constant will decrease significantly after the TMCS treatment is applied to damaged porous silica. These experimental results show that the TMCS treatment is a promising technique to repair the damage to porous silica during photoresist removal processing.

Original language	English
Pages (from-to)	F145-F148
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	10
DOIs	https://doi.org/10.1149/1.1504456
State	Published - Oct 2002

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@article{5780db9013e04fb6856dcc64e81844f4,

title = "Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing",

abstract = "The dielectric properties of organic-porous silica films deteriorate after photoresist removal processing. O2 plasma ashing has been commonly used to remove photoresist. Nevertheless, the O2 plasma will destroy the functional groups and induce moisture uptake in porous silica films. In this study, trimethylchlorosilane (TMCS) is used to repair the damage to porous silica caused by the O2 plasma ashing process. The leakage current and dielectric constant will decrease significantly after the TMCS treatment is applied to damaged porous silica. These experimental results show that the TMCS treatment is a promising technique to repair the damage to porous silica during photoresist removal processing.",

author = "Chang, {T. C.} and Mor, {Y. S.} and Po-Tsun Liu and Tsai, {T. M.} and Chen, {C. W.} and Chu, {C. J.} and Fu-Ming Pan and W. Lur and Szeb, {S. M.}",

year = "2002",

month = oct,

doi = "10.1149/1.1504456",

language = "English",

volume = "149",

pages = "F145--F148",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

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TY - JOUR

T1 - Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing

AU - Chang, T. C.

AU - Mor, Y. S.

AU - Liu, Po-Tsun

AU - Tsai, T. M.

AU - Chen, C. W.

AU - Chu, C. J.

AU - Pan, Fu-Ming

AU - Lur, W.

AU - Szeb, S. M.

PY - 2002/10

Y1 - 2002/10

N2 - The dielectric properties of organic-porous silica films deteriorate after photoresist removal processing. O2 plasma ashing has been commonly used to remove photoresist. Nevertheless, the O2 plasma will destroy the functional groups and induce moisture uptake in porous silica films. In this study, trimethylchlorosilane (TMCS) is used to repair the damage to porous silica caused by the O2 plasma ashing process. The leakage current and dielectric constant will decrease significantly after the TMCS treatment is applied to damaged porous silica. These experimental results show that the TMCS treatment is a promising technique to repair the damage to porous silica during photoresist removal processing.

AB - The dielectric properties of organic-porous silica films deteriorate after photoresist removal processing. O2 plasma ashing has been commonly used to remove photoresist. Nevertheless, the O2 plasma will destroy the functional groups and induce moisture uptake in porous silica films. In this study, trimethylchlorosilane (TMCS) is used to repair the damage to porous silica caused by the O2 plasma ashing process. The leakage current and dielectric constant will decrease significantly after the TMCS treatment is applied to damaged porous silica. These experimental results show that the TMCS treatment is a promising technique to repair the damage to porous silica during photoresist removal processing.

UR - http://www.scopus.com/inward/record.url?scp=0036805690&partnerID=8YFLogxK

U2 - 10.1149/1.1504456

DO - 10.1149/1.1504456

M3 - Article

AN - SCOPUS:0036805690

SN - 0013-4651

VL - 149

SP - F145-F148

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 10

ER -

Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing

Abstract

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