Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing

T. C. Chang*, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, C. J. Chu, Fu-Ming Pan, W. Lur, S. M. Szeb

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The dielectric properties of organic-porous silica films deteriorate after photoresist removal processing. O2 plasma ashing has been commonly used to remove photoresist. Nevertheless, the O2 plasma will destroy the functional groups and induce moisture uptake in porous silica films. In this study, trimethylchlorosilane (TMCS) is used to repair the damage to porous silica caused by the O2 plasma ashing process. The leakage current and dielectric constant will decrease significantly after the TMCS treatment is applied to damaged porous silica. These experimental results show that the TMCS treatment is a promising technique to repair the damage to porous silica during photoresist removal processing.

Original languageEnglish
Pages (from-to)F145-F148
JournalJournal of the Electrochemical Society
Volume149
Issue number10
DOIs
StatePublished - Oct 2002

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