Trench gate power MOSFETs with retrograde body profile

Bing-Yue Tsui; Ming Da Wu; Tian Choy Gan; Hui Hua Chou; Zhi Liang Wu; Ching Tzong Sune

doi:10.1109/WCT.2004.239934

Trench gate power MOSFETs with retrograde body profile

Bing-Yue Tsui^*, Ming Da Wu, Tian Choy Gan, Hui Hua Chou, Zhi Liang Wu, Ching Tzong Sune

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

Low specific on-resistance (R_ds,on) and low gate capacitance are essential for trench gate power MOSFETs. In this work, we propose a simple method of retrograde body profile to improve the two parameters simultaneously. The retrograde body MOSFET (RBMOS) is realized by high energy implantation. Because the highest channel concentration locates close to drain side, the depletion width at drain side is suppressed so that the channel length can be shortened greatly without sacrificing punch-through voltage. Low thermal budget and easy trench gate process are additional benefits. Power MOSFET with channel length of 0.4μm, threshold voltage of IV, and breakdown voltage of 32V is demonstrated. Comparing with the conventional device, the specific on-resistance and the figure-of-merit can be improved by 38% and 70%, respectively.

Original language	English
Pages	213-216
Number of pages	4
DOIs	https://doi.org/10.1109/WCT.2004.239934
State	Published - May 2004
Event	Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, Japan Duration: 24 May 2004 → 27 May 2004

Conference

Conference	Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)
Country/Territory	Japan
City	Kitakyushu
Period	24/05/04 → 27/05/04

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10.1109/WCT.2004.239934

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title = "Trench gate power MOSFETs with retrograde body profile",

abstract = "Low specific on-resistance (Rds,on) and low gate capacitance are essential for trench gate power MOSFETs. In this work, we propose a simple method of retrograde body profile to improve the two parameters simultaneously. The retrograde body MOSFET (RBMOS) is realized by high energy implantation. Because the highest channel concentration locates close to drain side, the depletion width at drain side is suppressed so that the channel length can be shortened greatly without sacrificing punch-through voltage. Low thermal budget and easy trench gate process are additional benefits. Power MOSFET with channel length of 0.4μm, threshold voltage of IV, and breakdown voltage of 32V is demonstrated. Comparing with the conventional device, the specific on-resistance and the figure-of-merit can be improved by 38% and 70%, respectively.",

author = "Bing-Yue Tsui and Wu, {Ming Da} and Gan, {Tian Choy} and Chou, {Hui Hua} and Wu, {Zhi Liang} and Sune, {Ching Tzong}",

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doi = "10.1109/WCT.2004.239934",

language = "English",

pages = "213--216",

note = "Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) ; Conference date: 24-05-2004 Through 27-05-2004",

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T1 - Trench gate power MOSFETs with retrograde body profile

AU - Tsui, Bing-Yue

AU - Wu, Ming Da

AU - Gan, Tian Choy

AU - Chou, Hui Hua

AU - Wu, Zhi Liang

AU - Sune, Ching Tzong

PY - 2004/5

Y1 - 2004/5

N2 - Low specific on-resistance (Rds,on) and low gate capacitance are essential for trench gate power MOSFETs. In this work, we propose a simple method of retrograde body profile to improve the two parameters simultaneously. The retrograde body MOSFET (RBMOS) is realized by high energy implantation. Because the highest channel concentration locates close to drain side, the depletion width at drain side is suppressed so that the channel length can be shortened greatly without sacrificing punch-through voltage. Low thermal budget and easy trench gate process are additional benefits. Power MOSFET with channel length of 0.4μm, threshold voltage of IV, and breakdown voltage of 32V is demonstrated. Comparing with the conventional device, the specific on-resistance and the figure-of-merit can be improved by 38% and 70%, respectively.

AB - Low specific on-resistance (Rds,on) and low gate capacitance are essential for trench gate power MOSFETs. In this work, we propose a simple method of retrograde body profile to improve the two parameters simultaneously. The retrograde body MOSFET (RBMOS) is realized by high energy implantation. Because the highest channel concentration locates close to drain side, the depletion width at drain side is suppressed so that the channel length can be shortened greatly without sacrificing punch-through voltage. Low thermal budget and easy trench gate process are additional benefits. Power MOSFET with channel length of 0.4μm, threshold voltage of IV, and breakdown voltage of 32V is demonstrated. Comparing with the conventional device, the specific on-resistance and the figure-of-merit can be improved by 38% and 70%, respectively.

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Trench gate power MOSFETs with retrograde body profile

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