Trapping/Detrapping Kinetic Modeling under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors

Shivendra Kumar Singh, Bang Ren Chen, Zhen Hong Huang, Tian Li Wu*, Yogesh Singh Chauhan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Incorporating inhibition dynamics for the first time, in this work, we successfully model the trapping and detrapping kinetics under positive and negative bias stress in 4H-SiC MOS-capacitors. The positive/negative gate bias stress is applied during extended measure stress measure (eMSM)-fast C-V measurements, demonstrating noticeable trapping/detrapping dynamics. Analytical expressions based on the inhibition mechanism are developed to successfully model the trapping/detrapping phenomenon and estimate the location of the trap, which is found to be 1 nm from the dielectric/SiC interface due to border/interface traps. The developed analytical model can provide valuable insights in understanding positive/negative bias instability in SiC technology.

Original languageEnglish
Pages (from-to)200-205
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume71
Issue number1
DOIs
StatePublished - 1 Jan 2024

Keywords

  • 4H-SiC
  • MOSFETs
  • detrapping
  • gate oxide
  • modeling
  • trapping

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