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Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 2 and HfSiON gate dielectrics
Wei Liang Lin*, Jen Chung Lou, Yao Jen Lee, Tien-Sheng Chao
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1
Scopus
citations