Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 2 and HfSiON gate dielectrics
- Wei Liang Lin*
- , Jen Chung Lou
- , Yao Jen Lee
- , Tien-Sheng Chao
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1
Scopus
citations