Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 2 and HfSiON gate dielectrics

Wei Liang Lin; Jen Chung Lou; Yao Jen Lee; Tien-Sheng Chao

doi:10.1109/IPFA.2009.5232685

Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics

Wei Liang Lin^*, Jen Chung Lou, Yao Jen Lee, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

DNBTI on Hf02 and HfSiON has been investigated. The DNBTI model under NBTIIpassivated stress cycles has proposed. In addition, as compared with the recovery of the VTH and charge pumping current under passivated stress, the variation of the interface states are not main factor to reduce the magnitude of VTH during the passivated stress cycle.

Original language	English
Title of host publication	Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages	122-125
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2009.5232685
State	Published - 16 Nov 2009
Event	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China Duration: 6 Jul 2009 → 10 Jul 2009

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Country/Territory	China
City	Suzhou
Period	6/07/09 → 10/07/09

Access to Document

10.1109/IPFA.2009.5232685

Cite this

Lin, W. L., Lou, J. C., Lee, Y. J., & Chao, T-S. (2009). Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 (pp. 122-125). [5232685] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2009.5232685

Lin, Wei Liang ; Lou, Jen Chung ; Lee, Yao Jen et al. / Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics. Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. pp. 122-125 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 2 and HfSiON gate dielectrics",

abstract = "DNBTI on Hf02 and HfSiON has been investigated. The DNBTI model under NBTIIpassivated stress cycles has proposed. In addition, as compared with the recovery of the VTH and charge pumping current under passivated stress, the variation of the interface states are not main factor to reduce the magnitude of VTH during the passivated stress cycle.",

author = "Lin, {Wei Liang} and Lou, {Jen Chung} and Lee, {Yao Jen} and Tien-Sheng Chao",

year = "2009",

month = nov,

day = "16",

doi = "10.1109/IPFA.2009.5232685",

language = "English",

isbn = "9781424439102",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "122--125",

booktitle = "Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009",

note = "2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 ; Conference date: 06-07-2009 Through 10-07-2009",

}

Lin, WL, Lou, JC, Lee, YJ & Chao, T-S 2009, Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics. in Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009., 5232685, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 122-125, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009, Suzhou, China, 6/07/09. https://doi.org/10.1109/IPFA.2009.5232685

Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics. / Lin, Wei Liang; Lou, Jen Chung; Lee, Yao Jen et al.
Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 122-125 5232685 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Lin WL, Lou JC, Lee YJ, Chao T-S. Trapping/Detrapping characteristics of electrons and holes under dynamic NBTI stress on Hf0 ₂ and HfSiON gate dielectrics. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 122-125. 5232685. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2009.5232685