Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO 2 and HfSiON gate dielectrics

Wei Liang Lin; Yao Jen Lee; Wen Cheng Lo; King Sheng Chen; Y. T. Hou; K. C. Lin; Tien-Sheng Chao

doi:10.1109/IPFA.2008.4588199

Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics

Wei Liang Lin^*, Yao Jen Lee, Wen Cheng Lo, King Sheng Chen, Y. T. Hou, K. C. Lin, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

PBTI degradation for HfO ₂ and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of ΔV _TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO ₂ . On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO ₂ dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO ₂ gate dielectrics.

Original language	English
Title of host publication	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs	https://doi.org/10.1109/IPFA.2008.4588199
State	Published - 23 Sep 2008
Event	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore Duration: 7 Jul 2008 → 11 Jul 2008

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Country/Territory	Singapore
City	Singapore
Period	7/07/08 → 11/07/08

Access to Document

10.1109/IPFA.2008.4588199

Cite this

Lin, W. L., Lee, Y. J., Lo, W. C., Chen, K. S., Hou, Y. T., Lin, K. C., & Chao, T.-S. (2008). Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics. In 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA Article 4588199 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2008.4588199

Lin, Wei Liang ; Lee, Yao Jen ; Lo, Wen Cheng et al. / Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics. 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{f1e556d3aa0542c99c51bb884c36c112,

title = "Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO 2 and HfSiON gate dielectrics",

abstract = " PBTI degradation for HfO 2 and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of ΔV TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO 2 . On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO 2 dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO 2 gate dielectrics. ",

author = "Lin, {Wei Liang} and Lee, {Yao Jen} and Lo, {Wen Cheng} and Chen, {King Sheng} and Hou, {Y. T.} and Lin, {K. C.} and Tien-Sheng Chao",

year = "2008",

month = sep,

day = "23",

doi = "10.1109/IPFA.2008.4588199",

language = "English",

isbn = "1424420393",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

note = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA ; Conference date: 07-07-2008 Through 11-07-2008",

}

Lin, WL, Lee, YJ, Lo, WC, Chen, KS, Hou, YT, Lin, KC & Chao, T-S 2008, Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics. in 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA., 4588199, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Singapore, Singapore, 7/07/08. https://doi.org/10.1109/IPFA.2008.4588199

Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics. / Lin, Wei Liang; Lee, Yao Jen; Lo, Wen Cheng et al.
2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588199 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chen, King Sheng

AU - Hou, Y. T.

AU - Lin, K. C.

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N2 - PBTI degradation for HfO 2 and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of ΔV TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO 2 . On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO 2 dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO 2 gate dielectrics.

AB - PBTI degradation for HfO 2 and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of ΔV TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO 2 . On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO 2 dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO 2 gate dielectrics.

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Lin WL, Lee YJ, Lo WC, Chen KS, Hou YT, Lin KC et al. Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO ₂ and HfSiON gate dielectrics. In 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588199. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2008.4588199