The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased Ioff and large Vth shifts, while N2 and O2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.
|Number of pages||3|
|State||Published - 1 Dec 2010|
|Event||17th International Display Workshops, IDW'10 - Fukuoka, Japan|
Duration: 1 Dec 2010 → 3 Dec 2010
|Conference||17th International Display Workshops, IDW'10|
|Period||1/12/10 → 3/12/10|