Abstract
The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased Ioff and large Vth shifts, while N2 and O2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.
Original language | English |
---|---|
Pages | 1845-1847 |
Number of pages | 3 |
State | Published - 1 Dec 2010 |
Event | 17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010 |
Conference
Conference | 17th International Display Workshops, IDW'10 |
---|---|
Country/Territory | Japan |
City | Fukuoka |
Period | 1/12/10 → 3/12/10 |