Transport properties of CrO2 (110) films grown on TiO 2 buffered Si substrates by chemical vapor deposition

S. J. Liu; Jenh-Yih Juang; Kaung-Hsiung Wu; T. M. Uen; Y. S. Gou; Jiunn-Yuan Lin

doi:10.1063/1.1481534

Transport properties of CrO₂ (110) films grown on TiO ₂ buffered Si substrates by chemical vapor deposition

S. J. Liu, Jenh-Yih Juang, Kaung-Hsiung Wu, T. M. Uen, Y. S. Gou, Jiunn-Yuan Lin

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Abstract

Epitaxial CrO₂ (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO₂ derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO₂ were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO₃ precursor. The transport measurements show that the CrO₂ films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ₀+AT²e^(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T ^3/2 law and the slope suggests a critical wavelength of λ_Δ∼30.6Å beyond which spin-flip scattering becomes important.

Original language	English
Pages (from-to)	4202-4204
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	22
DOIs	https://doi.org/10.1063/1.1481534
State	Published - 3 Jun 2002

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@article{59b5b068aed34e5c880ef00fab31b0d8,

title = "Transport properties of CrO2 (110) films grown on TiO 2 buffered Si substrates by chemical vapor deposition",

abstract = "Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6{\AA} beyond which spin-flip scattering becomes important.",

author = "Liu, {S. J.} and Jenh-Yih Juang and Kaung-Hsiung Wu and Uen, {T. M.} and Gou, {Y. S.} and Jiunn-Yuan Lin",

year = "2002",

month = jun,

day = "3",

doi = "10.1063/1.1481534",

language = "English",

volume = "80",

pages = "4202--4204",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Transport properties of CrO2 (110) films grown on TiO 2 buffered Si substrates by chemical vapor deposition

AU - Liu, S. J.

AU - Juang, Jenh-Yih

AU - Wu, Kaung-Hsiung

AU - Uen, T. M.

AU - Gou, Y. S.

AU - Lin, Jiunn-Yuan

PY - 2002/6/3

Y1 - 2002/6/3

N2 - Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6Å beyond which spin-flip scattering becomes important.

AB - Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6Å beyond which spin-flip scattering becomes important.

UR - http://www.scopus.com/inward/record.url?scp=79956041306&partnerID=8YFLogxK

U2 - 10.1063/1.1481534

DO - 10.1063/1.1481534

M3 - Article

AN - SCOPUS:79956041306

SN - 0003-6951

VL - 80

SP - 4202

EP - 4204

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Transport properties of CrO₂ (110) films grown on TiO ₂ buffered Si substrates by chemical vapor deposition

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