Transparent amorphous oxide semiconductors for system on panel applications

Po-Tsun Liu, Li Wei Chu, Li Feng Teng, Yang Shun Fan, Chur Shyang Fuh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations


We demonstrate the applications of amorphous InGaZnO thin film transistor (a- IGZO TFT), extended from the pixel switcher/current driver, gate driver on array (GOA) to resistive random access memory (RRAM) technologies for system-on-panels (SoPs). The high-performance IGZO TFT with mobility of 13.5 cm2/Vs is proposed by microwave annealing process at room temperature only for 100 sec. Furthermore, an integrated gate driver scheme with the a-IGZO TFT as backbone is demonstrated in comparison with the amorphous Si TFT backplane. The rise and fall time of a-IGZO gate driver circuits is shorter than that of a-Si TFT gate driver. In addition, the ASK demodulator with a-IGZO TFT is realized successfully, and potentially to be applied for the system of low-frequency RFID tag. The study on a-IGZO RRAM reveals excellent reliability including 1000 times DC sweep endurance, 104 pulse endurance, 104 s data retention with read disturb immunity. The flexibility of a-IGZO RRAM device is also examined for flexible electronics applications.

Original languageEnglish
Title of host publicationThin Film Transistors 11, TFT 2012
Number of pages12
StatePublished - 1 Jan 2013
Event11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
Duration: 8 Oct 201210 Oct 2012

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


Conference11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
Country/TerritoryUnited States
CityHonolulu, HI


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