We demonstrate the applications of amorphous InGaZnO thin film transistor (a- IGZO TFT), extended from the pixel switcher/current driver, gate driver on array (GOA) to resistive random access memory (RRAM) technologies for system-on-panels (SoPs). The high-performance IGZO TFT with mobility of 13.5 cm2/Vs is proposed by microwave annealing process at room temperature only for 100 sec. Furthermore, an integrated gate driver scheme with the a-IGZO TFT as backbone is demonstrated in comparison with the amorphous Si TFT backplane. The rise and fall time of a-IGZO gate driver circuits is shorter than that of a-Si TFT gate driver. In addition, the ASK demodulator with a-IGZO TFT is realized successfully, and potentially to be applied for the system of low-frequency RFID tag. The study on a-IGZO RRAM reveals excellent reliability including 1000 times DC sweep endurance, 104 pulse endurance, 104 s data retention with read disturb immunity. The flexibility of a-IGZO RRAM device is also examined for flexible electronics applications.