Transient-to-digital converter for protection design in CMOS integrated circuits against electrical fast transient

Cheng Cheng Yen; Ming-Dou Ker; Chi Sheng Liao; Tung Yang Chen; Chih Chung Tsai

doi:10.1109/ISEMC.2009.5284683

Transient-to-digital converter for protection design in CMOS integrated circuits against electrical fast transient

Cheng Cheng Yen^*, Ming-Dou Ker, Chi Sheng Liao, Tung Yang Chen, Chih Chung Tsai

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

An on-chip transient-to-digital converter for protection design against electrical fast transient (EFT) is proposed. The proposed transient-to-digital converter is designed to detect fast electrical transients under EFT tests. The output digital codes can correspond to different EFT voltages during the EFT-induced transient disturbances. The experimental results in a 0.18-μm CMOS integrated circuit (IC) with 3.3-V devices have confirmed the detection function and digital output codes.

Original language	English
Title of host publication	2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009
Pages	41-44
Number of pages	4
DOIs	https://doi.org/10.1109/ISEMC.2009.5284683
State	Published - 1 Dec 2009
Event	2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009 - Austin, TX, United States Duration: 17 Aug 2009 → 21 Aug 2009

Publication series

Name	IEEE International Symposium on Electromagnetic Compatibility
ISSN (Print)	1077-4076

Conference

Conference	2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009
Country/Territory	United States
City	Austin, TX
Period	17/08/09 → 21/08/09

Keywords

Converter
Electrical fast transient (EFT) test
Transient detection circuit

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10.1109/ISEMC.2009.5284683

Cite this

Yen, C. C., Ker, M-D., Liao, C. S., Chen, T. Y., & Tsai, C. C. (2009). Transient-to-digital converter for protection design in CMOS integrated circuits against electrical fast transient. In 2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009 (pp. 41-44). [5284683] (IEEE International Symposium on Electromagnetic Compatibility). https://doi.org/10.1109/ISEMC.2009.5284683

@inproceedings{b6143d6229004452aa6eb5cd20b63cc2,

title = "Transient-to-digital converter for protection design in CMOS integrated circuits against electrical fast transient",

abstract = "An on-chip transient-to-digital converter for protection design against electrical fast transient (EFT) is proposed. The proposed transient-to-digital converter is designed to detect fast electrical transients under EFT tests. The output digital codes can correspond to different EFT voltages during the EFT-induced transient disturbances. The experimental results in a 0.18-μm CMOS integrated circuit (IC) with 3.3-V devices have confirmed the detection function and digital output codes.",

keywords = "Converter, Electrical fast transient (EFT) test, Transient detection circuit",

author = "Yen, {Cheng Cheng} and Ming-Dou Ker and Liao, {Chi Sheng} and Chen, {Tung Yang} and Tsai, {Chih Chung}",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/ISEMC.2009.5284683",

language = "English",

isbn = "9781424442676",

series = "IEEE International Symposium on Electromagnetic Compatibility",

pages = "41--44",

booktitle = "2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009",

note = "2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009 ; Conference date: 17-08-2009 Through 21-08-2009",

}

Yen, CC, Ker, M-D, Liao, CS, Chen, TY & Tsai, CC 2009, Transient-to-digital converter for protection design in CMOS integrated circuits against electrical fast transient. in 2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009., 5284683, IEEE International Symposium on Electromagnetic Compatibility, pp. 41-44, 2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009, Austin, TX, United States, 17/08/09. https://doi.org/10.1109/ISEMC.2009.5284683

Transient-to-digital converter for protection design in CMOS integrated circuits against electrical fast transient. / Yen, Cheng Cheng; Ker, Ming-Dou; Liao, Chi Sheng et al.
2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009. 2009. p. 41-44 5284683 (IEEE International Symposium on Electromagnetic Compatibility).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Transient-to-digital converter for protection design in CMOS integrated circuits against electrical fast transient

AU - Yen, Cheng Cheng

AU - Ker, Ming-Dou

AU - Liao, Chi Sheng

AU - Chen, Tung Yang

AU - Tsai, Chih Chung

PY - 2009/12/1

Y1 - 2009/12/1

N2 - An on-chip transient-to-digital converter for protection design against electrical fast transient (EFT) is proposed. The proposed transient-to-digital converter is designed to detect fast electrical transients under EFT tests. The output digital codes can correspond to different EFT voltages during the EFT-induced transient disturbances. The experimental results in a 0.18-μm CMOS integrated circuit (IC) with 3.3-V devices have confirmed the detection function and digital output codes.

AB - An on-chip transient-to-digital converter for protection design against electrical fast transient (EFT) is proposed. The proposed transient-to-digital converter is designed to detect fast electrical transients under EFT tests. The output digital codes can correspond to different EFT voltages during the EFT-induced transient disturbances. The experimental results in a 0.18-μm CMOS integrated circuit (IC) with 3.3-V devices have confirmed the detection function and digital output codes.

KW - Converter

KW - Electrical fast transient (EFT) test

KW - Transient detection circuit

UR - http://www.scopus.com/inward/record.url?scp=74349100885&partnerID=8YFLogxK

U2 - 10.1109/ISEMC.2009.5284683

DO - 10.1109/ISEMC.2009.5284683

M3 - Conference contribution

AN - SCOPUS:74349100885

SN - 9781424442676

T3 - IEEE International Symposium on Electromagnetic Compatibility

SP - 41

EP - 44

BT - 2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009

T2 - 2009 IEEE International Symposium on Electromagnetic Compatibility, EMC 2009

Y2 - 17 August 2009 through 21 August 2009

ER -

Transient-to-digital converter for protection design in CMOS integrated circuits against electrical fast transient

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