Transient-induced latchup in CMOS ICs under electrical fast-transient test

Cheng Cheng Yen; Ming-Dou Ker; Tung Yang Chen

doi:10.1109/TDMR.2009.2015938

Transient-induced latchup in CMOS ICs under electrical fast-transient test

Cheng Cheng Yen^*, Ming-Dou Ker, Tung Yang Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The occurrence of transient-induced latchup (TLU) in CMOS integrated circuits (ICs) under electrical fast-transient (EFT) tests is studied. The test chip with the parasitic silicon-controlled-rectifier (SCR) structure fabricated by a 0.18-μ m CMOS process was used in EFT tests. For physical mechanism characterization, the specific swept-back current caused by the minority carriers stored within the parasitic PNPN structure of CMOS ICs is the major cause of TLU under EFT tests. Different types of board-level noise filter networks are evaluated to find their effectiveness for improving the immunity of CMOS ICs against TLU under EFT tests. By choosing the proper components in each noise filter network, the TLU immunity of CMOS ICs against EFT tests can be greatly improved.

Original language	English
Article number	4799110
Pages (from-to)	255-264
Number of pages	10
Journal	IEEE Transactions on Device and Materials Reliability
Volume	9
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2009.2015938
State	Published - 1 Jun 2009

Keywords

Board-level noise filter
Electrical fast transient (EFT)
Latchup
Silicon-controlled rectifier (SCR)
Transient-induced latchup (TLU)

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10.1109/TDMR.2009.2015938

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title = "Transient-induced latchup in CMOS ICs under electrical fast-transient test",

abstract = "The occurrence of transient-induced latchup (TLU) in CMOS integrated circuits (ICs) under electrical fast-transient (EFT) tests is studied. The test chip with the parasitic silicon-controlled-rectifier (SCR) structure fabricated by a 0.18-μ m CMOS process was used in EFT tests. For physical mechanism characterization, the specific swept-back current caused by the minority carriers stored within the parasitic PNPN structure of CMOS ICs is the major cause of TLU under EFT tests. Different types of board-level noise filter networks are evaluated to find their effectiveness for improving the immunity of CMOS ICs against TLU under EFT tests. By choosing the proper components in each noise filter network, the TLU immunity of CMOS ICs against EFT tests can be greatly improved.",

keywords = "Board-level noise filter, Electrical fast transient (EFT), Latchup, Silicon-controlled rectifier (SCR), Transient-induced latchup (TLU)",

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AU - Ker, Ming-Dou

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AB - The occurrence of transient-induced latchup (TLU) in CMOS integrated circuits (ICs) under electrical fast-transient (EFT) tests is studied. The test chip with the parasitic silicon-controlled-rectifier (SCR) structure fabricated by a 0.18-μ m CMOS process was used in EFT tests. For physical mechanism characterization, the specific swept-back current caused by the minority carriers stored within the parasitic PNPN structure of CMOS ICs is the major cause of TLU under EFT tests. Different types of board-level noise filter networks are evaluated to find their effectiveness for improving the immunity of CMOS ICs against TLU under EFT tests. By choosing the proper components in each noise filter network, the TLU immunity of CMOS ICs against EFT tests can be greatly improved.

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Transient-induced latchup in CMOS ICs under electrical fast-transient test

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