Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO 2 interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|State||Published - 1 Dec 2004|
|Event||IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States|
Duration: 13 Dec 2004 → 15 Dec 2004