Trade-off Between Thermal Budget and Thickness Scaling: A Bottleneck on Quest for BEOL Compatible Ultra-Thin Ferroelectric Films Sub-5nm

Chui Yi Chiu*, Sourav De*, Chen Yi Cho, Tuo Hung Hou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The article reports a tradeoff between back-end-of-line (BEOL) compatibility of annealing temperature (≥400°C) and thickness scaling of hafnium-zirconium-oxide (HZO) solid solution-based ferroelectric thin films with a ratio of hafnium and zirconium as 1:1. Our study shows the scaling limit up to 5 nm for maintaining the BEOL compatibility in HZO films developed with Tetrakis (ethylmethylamido) hafnium (TEMAH) and Tetrakis (ethylmethylamido) zirconium (TEMAZ) precursors.

Original languageEnglish
Title of host publicationIEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publicationStrengthening the Globalization in Semiconductors, EDTM 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350371529
DOIs
StatePublished - 2024
Event8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 - Bangalore, India
Duration: 3 Mar 20246 Mar 2024

Publication series

NameIEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

Conference

Conference8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
Country/TerritoryIndia
CityBangalore
Period3/03/246/03/24

Keywords

  • Ferroelectric memory
  • HZO
  • HfO2
  • and thermal budget
  • thickness scaling

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