@inproceedings{f636a5708cf443809122043727cb7a1c,
title = "Trade-off Between Thermal Budget and Thickness Scaling: A Bottleneck on Quest for BEOL Compatible Ultra-Thin Ferroelectric Films Sub-5nm",
abstract = "The article reports a tradeoff between back-end-of-line (BEOL) compatibility of annealing temperature (≥400°C) and thickness scaling of hafnium-zirconium-oxide (HZO) solid solution-based ferroelectric thin films with a ratio of hafnium and zirconium as 1:1. Our study shows the scaling limit up to 5 nm for maintaining the BEOL compatibility in HZO films developed with Tetrakis (ethylmethylamido) hafnium (TEMAH) and Tetrakis (ethylmethylamido) zirconium (TEMAZ) precursors.",
keywords = "Ferroelectric memory, HZO, HfO2, and thermal budget, thickness scaling",
author = "Chiu, {Chui Yi} and Sourav De and Cho, {Chen Yi} and Hou, {Tuo Hung}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 ; Conference date: 03-03-2024 Through 06-03-2024",
year = "2024",
doi = "10.1109/EDTM58488.2024.10511710",
language = "English",
series = "IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "IEEE Electron Devices Technology and Manufacturing Conference",
address = "United States",
}