Toward high-bandwidth yellow-green micro-LEDs utilizing nanoporous distributed Bragg reflectors for visible light communication

Wei Ta Huang; Chun Yen Peng; Hsin Chiang; Yu Ming Huang; Konthoujam James Singh; Wei Bin Lee; Chi Wai Chow; Shih Chen Chen; Hao Chung Kuo

doi:10.1364/PRJ.462519

Toward high-bandwidth yellow-green micro-LEDs utilizing nanoporous distributed Bragg reflectors for visible light communication

Wei Ta Huang, Chun Yen Peng, Hsin Chiang, Yu Ming Huang, Konthoujam James Singh, Wei Bin Lee, Chi Wai Chow, Shih Chen Chen, Hao Chung Kuo

Department of Photonics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

In this study, high −3 dB bandwidth yellow-green InGaN/GaN micro-LEDs grown on polar c-plane GaN substrates are realized by using nanoporous distributed Bragg reflectors, which can increase light extraction efficiency and serve as strain-relaxed buffers to mitigate the quantum-confined Stark effect, resulting in improved external quantum efficiency. Moreover, atomic layer deposition technology is introduced for surface defect passivation, thereby reducing the leakage current. As a result, the device exhibits the highest −3 dB bandwidth up to 442 MHz and a data transmission rate of 800 Mbit/s at a current density of 2.5 kA∕cm² with on–off keying modulation, and holds great promise for future high-speed visible light communication applications.

Original language	English
Pages (from-to)	1810-1818
Number of pages	9
Journal	Photonics Research
Volume	10
Issue number	9
DOIs	https://doi.org/10.1364/PRJ.462519
State	Published - 1 Aug 2022

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title = "Toward high-bandwidth yellow-green micro-LEDs utilizing nanoporous distributed Bragg reflectors for visible light communication",

abstract = "In this study, high −3 dB bandwidth yellow-green InGaN/GaN micro-LEDs grown on polar c-plane GaN substrates are realized by using nanoporous distributed Bragg reflectors, which can increase light extraction efficiency and serve as strain-relaxed buffers to mitigate the quantum-confined Stark effect, resulting in improved external quantum efficiency. Moreover, atomic layer deposition technology is introduced for surface defect passivation, thereby reducing the leakage current. As a result, the device exhibits the highest −3 dB bandwidth up to 442 MHz and a data transmission rate of 800 Mbit/s at a current density of 2.5 kA∕cm2 with on–off keying modulation, and holds great promise for future high-speed visible light communication applications.",

author = "Huang, {Wei Ta} and Peng, {Chun Yen} and Hsin Chiang and Huang, {Yu Ming} and Singh, {Konthoujam James} and Lee, {Wei Bin} and Chow, {Chi Wai} and Chen, {Shih Chen} and Kuo, {Hao Chung}",

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doi = "10.1364/PRJ.462519",

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T1 - Toward high-bandwidth yellow-green micro-LEDs utilizing nanoporous distributed Bragg reflectors for visible light communication

AU - Huang, Wei Ta

AU - Peng, Chun Yen

AU - Chiang, Hsin

AU - Huang, Yu Ming

AU - Singh, Konthoujam James

AU - Lee, Wei Bin

AU - Chow, Chi Wai

AU - Chen, Shih Chen

AU - Kuo, Hao Chung

PY - 2022/8/1

Y1 - 2022/8/1

N2 - In this study, high −3 dB bandwidth yellow-green InGaN/GaN micro-LEDs grown on polar c-plane GaN substrates are realized by using nanoporous distributed Bragg reflectors, which can increase light extraction efficiency and serve as strain-relaxed buffers to mitigate the quantum-confined Stark effect, resulting in improved external quantum efficiency. Moreover, atomic layer deposition technology is introduced for surface defect passivation, thereby reducing the leakage current. As a result, the device exhibits the highest −3 dB bandwidth up to 442 MHz and a data transmission rate of 800 Mbit/s at a current density of 2.5 kA∕cm2 with on–off keying modulation, and holds great promise for future high-speed visible light communication applications.

AB - In this study, high −3 dB bandwidth yellow-green InGaN/GaN micro-LEDs grown on polar c-plane GaN substrates are realized by using nanoporous distributed Bragg reflectors, which can increase light extraction efficiency and serve as strain-relaxed buffers to mitigate the quantum-confined Stark effect, resulting in improved external quantum efficiency. Moreover, atomic layer deposition technology is introduced for surface defect passivation, thereby reducing the leakage current. As a result, the device exhibits the highest −3 dB bandwidth up to 442 MHz and a data transmission rate of 800 Mbit/s at a current density of 2.5 kA∕cm2 with on–off keying modulation, and holds great promise for future high-speed visible light communication applications.

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Toward high-bandwidth yellow-green micro-LEDs utilizing nanoporous distributed Bragg reflectors for visible light communication

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