To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment

Chein Hao Chen*, Yean Kuen Fang, Chih Wei Yang, Shyh Fann Ting, Yong Shiuan Tsair, Ming Fang Wang, Tuo-Hung Hou, Mo Chiun Yu, Shih Chang Chen, Simon M. Jang, Douglas C.H. Yu, Mong Song Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The electrical properties affected by the bottom oxide materials and the post-deposition treatment on the ultrathin (down to 1.6 nm) nitride/oxide (N/O) stacks, prepared by rapid thermal chemical vapor deposition (RTCVD) with two-step NH3/N2O post-deposition annealing, for deep submicrometer dual-gate MOSFETs have been studied extensively. N/O stack with NO-grown bottom oxide exhibits fewer flat-band voltage shifts and higher hole and electron mobility, but suffers from worse leakage current than that with conventional O2-grown bottom oxide. In post-deposition treatment, increasing NH3 nitridation temperature can effectively reduce the equivalent oxide thickness (EOT) and improve leakage current reduction rate, but it can result in worse mobility. Furthermore, the subsequent N2O annealing eliminates the defects and offers a contrary effect on the N/O stack in comparison with the NH3 nitridation step.

Original languageEnglish
Pages (from-to)2769-2776
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume48
Issue number12
DOIs
StatePublished - 1 Dec 2001

Keywords

  • Bottom oxide
  • NH
  • NO
  • Nitride/oxide (N/O)
  • Post-deposition annealing
  • Ultrathin

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