Abstract
The electrical properties affected by the bottom oxide materials and the post-deposition treatment on the ultrathin (down to 1.6 nm) nitride/oxide (N/O) stacks, prepared by rapid thermal chemical vapor deposition (RTCVD) with two-step NH3/N2O post-deposition annealing, for deep submicrometer dual-gate MOSFETs have been studied extensively. N/O stack with NO-grown bottom oxide exhibits fewer flat-band voltage shifts and higher hole and electron mobility, but suffers from worse leakage current than that with conventional O2-grown bottom oxide. In post-deposition treatment, increasing NH3 nitridation temperature can effectively reduce the equivalent oxide thickness (EOT) and improve leakage current reduction rate, but it can result in worse mobility. Furthermore, the subsequent N2O annealing eliminates the defects and offers a contrary effect on the N/O stack in comparison with the NH3 nitridation step.
Original language | English |
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Pages (from-to) | 2769-2776 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 48 |
Issue number | 12 |
DOIs | |
State | Published - 1 Dec 2001 |
Keywords
- Bottom oxide
- NH
- NO
- Nitride/oxide (N/O)
- Post-deposition annealing
- Ultrathin