TiN-C Based CMOS MEMS Pirani Gauge for on-Chip Pressure Measurement

Manu Garg; Fang Wei Tsai; Khanjan Joshi; Yi Chiu; Pushpapraj Singh

doi:10.1109/SENSORS56945.2023.10325154

TiN-C Based CMOS MEMS Pirani Gauge for on-Chip Pressure Measurement

Manu Garg, Fang Wei Tsai, Khanjan Joshi, Yi Chiu, Pushpapraj Singh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The paper presents a monolithically integrable CMOS back-end-of-line (BEOL) integrated MEMS Pirani gauge. The proposed idea is implemented using a TiN-C platform based on a 0.35 μm 2P4M commercial CMOS process. In the given implementation, TiN in the interconnect layer is explored as a heating element. Owing to the lower thermal conductivity (4 W/m.K) of TiN, excellent thermal isolation of intermetal dielectric layers, and a narrow vertical conduction gap, the gauge exhibits a wide dynamic range from 26 Pa to 10⁶ Pa. Experimental results of the fabricated devices are in excellent agreement with the simulated curve with a maximum error of 0.04%. Additionally, the fabricated gauge demonstrates excellent reproducibility while maintaining an acceptable error margin of ≤ 0.01 % over the entire range.

Original language	English
Title of host publication	2023 IEEE SENSORS, SENSORS 2023 - Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350303872
DOIs	https://doi.org/10.1109/SENSORS56945.2023.10325154
State	Published - 2023
Event	2023 IEEE SENSORS, SENSORS 2023 - Vienna, Austria Duration: 29 Oct 2023 → 1 Nov 2023

Publication series

Name	Proceedings of IEEE Sensors
ISSN (Print)	1930-0395
ISSN (Electronic)	2168-9229

Conference

Conference	2023 IEEE SENSORS, SENSORS 2023
Country/Territory	Austria
City	Vienna
Period	29/10/23 → 1/11/23

Keywords

BEOL
CMOS-MEMS
MEMS
Monolithic Integration
Pirani gauge

Access to Document

10.1109/SENSORS56945.2023.10325154

Cite this

@inproceedings{823d5802d86d4c9a94ed65f57958f6be,

title = "TiN-C Based CMOS MEMS Pirani Gauge for on-Chip Pressure Measurement",

abstract = "The paper presents a monolithically integrable CMOS back-end-of-line (BEOL) integrated MEMS Pirani gauge. The proposed idea is implemented using a TiN-C platform based on a 0.35 μm 2P4M commercial CMOS process. In the given implementation, TiN in the interconnect layer is explored as a heating element. Owing to the lower thermal conductivity (4 W/m.K) of TiN, excellent thermal isolation of intermetal dielectric layers, and a narrow vertical conduction gap, the gauge exhibits a wide dynamic range from 26 Pa to 106 Pa. Experimental results of the fabricated devices are in excellent agreement with the simulated curve with a maximum error of 0.04%. Additionally, the fabricated gauge demonstrates excellent reproducibility while maintaining an acceptable error margin of ≤ 0.01 % over the entire range.",

keywords = "BEOL, CMOS-MEMS, MEMS, Monolithic Integration, Pirani gauge",

author = "Manu Garg and Tsai, {Fang Wei} and Khanjan Joshi and Yi Chiu and Pushpapraj Singh",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE SENSORS, SENSORS 2023 ; Conference date: 29-10-2023 Through 01-11-2023",

year = "2023",

doi = "10.1109/SENSORS56945.2023.10325154",

language = "English",

series = "Proceedings of IEEE Sensors",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE SENSORS, SENSORS 2023 - Conference Proceedings",

address = "美國",

}

Garg, M, Tsai, FW, Joshi, K, Chiu, Y & Singh, P 2023, TiN-C Based CMOS MEMS Pirani Gauge for on-Chip Pressure Measurement. in 2023 IEEE SENSORS, SENSORS 2023 - Conference Proceedings. Proceedings of IEEE Sensors, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE SENSORS, SENSORS 2023, Vienna, Austria, 29/10/23. https://doi.org/10.1109/SENSORS56945.2023.10325154

TiN-C Based CMOS MEMS Pirani Gauge for on-Chip Pressure Measurement. / Garg, Manu; Tsai, Fang Wei; Joshi, Khanjan et al.
2023 IEEE SENSORS, SENSORS 2023 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings of IEEE Sensors).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - TiN-C Based CMOS MEMS Pirani Gauge for on-Chip Pressure Measurement

AU - Garg, Manu

AU - Tsai, Fang Wei

AU - Joshi, Khanjan

AU - Chiu, Yi

AU - Singh, Pushpapraj

PY - 2023

Y1 - 2023

N2 - The paper presents a monolithically integrable CMOS back-end-of-line (BEOL) integrated MEMS Pirani gauge. The proposed idea is implemented using a TiN-C platform based on a 0.35 μm 2P4M commercial CMOS process. In the given implementation, TiN in the interconnect layer is explored as a heating element. Owing to the lower thermal conductivity (4 W/m.K) of TiN, excellent thermal isolation of intermetal dielectric layers, and a narrow vertical conduction gap, the gauge exhibits a wide dynamic range from 26 Pa to 106 Pa. Experimental results of the fabricated devices are in excellent agreement with the simulated curve with a maximum error of 0.04%. Additionally, the fabricated gauge demonstrates excellent reproducibility while maintaining an acceptable error margin of ≤ 0.01 % over the entire range.

AB - The paper presents a monolithically integrable CMOS back-end-of-line (BEOL) integrated MEMS Pirani gauge. The proposed idea is implemented using a TiN-C platform based on a 0.35 μm 2P4M commercial CMOS process. In the given implementation, TiN in the interconnect layer is explored as a heating element. Owing to the lower thermal conductivity (4 W/m.K) of TiN, excellent thermal isolation of intermetal dielectric layers, and a narrow vertical conduction gap, the gauge exhibits a wide dynamic range from 26 Pa to 106 Pa. Experimental results of the fabricated devices are in excellent agreement with the simulated curve with a maximum error of 0.04%. Additionally, the fabricated gauge demonstrates excellent reproducibility while maintaining an acceptable error margin of ≤ 0.01 % over the entire range.

KW - BEOL

KW - CMOS-MEMS

KW - MEMS

KW - Monolithic Integration

KW - Pirani gauge

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U2 - 10.1109/SENSORS56945.2023.10325154

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M3 - Conference contribution

AN - SCOPUS:85179753727

T3 - Proceedings of IEEE Sensors

BT - 2023 IEEE SENSORS, SENSORS 2023 - Conference Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

TiN-C Based CMOS MEMS Pirani Gauge for on-Chip Pressure Measurement

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