Keyphrases
Nanowires
100%
Power Fluctuation
100%
Complementary Metal Oxide Semiconductor
100%
Gate-all-around
100%
Time Fluctuation
100%
Random Discrete Dopants
100%
Channel Doping
42%
P-type
28%
NWFET
28%
Drain Extension
28%
Random Dopant Fluctuation
28%
Technology Node
14%
Silicon Nanowires (SiNWs)
14%
Noise Power
14%
Power Consumption
14%
Threshold Voltage
14%
Circuit Performance
14%
Small Variation
14%
Dynamic Power
14%
Metal-oxide-semiconductor Devices
14%
Device Simulation
14%
Ioff
14%
Quantum Mechanical
14%
Semiconductor Technology
14%
Gate Capacitance
14%
Short-circuit Power
14%
Noise Margin
14%
Static Power Consumption
14%
Sub-7 Nm
14%
Nonequilibrium Green's Function
14%
Timing Noise
14%
Engineering
Dopants
100%
Power Fluctuation
100%
Complementary Metal-Oxide-Semiconductor
100%
Nanowire
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Electric Power Utilization
33%
Nodes
16%
Noise Power
16%
Key Parameter
16%
Circuit Performance
16%
Noise Margin
16%
Nonequilibrium
16%
Gate Capacitance
16%
Complementary Metal-Oxide-Semiconductor Device
16%
Greens Function Model
16%
Material Science
Doping (Additives)
100%
Nanowire
100%
Electronic Circuit
100%
Complementary Metal-Oxide-Semiconductor Device
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
28%
Silicon
14%
Capacitance
14%
Functional Modeling
14%