Time-resolved photoluminescence of isoelectronic traps in ZnSe1-x Tex semiconductor alloys

Y. C. Lin; Wu-Ching Chou; W. C. Fan; J. T. Ku; F. K. Ke; W. J. Wang; S. L. Yang; Wei-Kuo Chen; Wen-Hao Chang; C. H. Chia

doi:10.1063/1.3054162

Time-resolved photoluminescence of isoelectronic traps in ZnSe_1-x Te_x semiconductor alloys

Y. C. Lin, Wu-Ching Chou, W. C. Fan, J. T. Ku, F. K. Ke, W. J. Wang, S. L. Yang, Wei-Kuo Chen, Wen-Hao Chang, C. H. Chia

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe_1-x Te_x. As the Te concentration increases, the stretching exponent β initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.

Original language	English
Article number	241909
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	93
Issue number	24
DOIs	https://doi.org/10.1063/1.3054162
State	Published - 15 Dec 2008

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title = "Time-resolved photoluminescence of isoelectronic traps in ZnSe1-x Tex semiconductor alloys",

abstract = "Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-x Tex. As the Te concentration increases, the stretching exponent β initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.",

author = "Lin, {Y. C.} and Wu-Ching Chou and Fan, {W. C.} and Ku, {J. T.} and Ke, {F. K.} and Wang, {W. J.} and Yang, {S. L.} and Wei-Kuo Chen and Wen-Hao Chang and Chia, {C. H.}",

year = "2008",

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doi = "10.1063/1.3054162",

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T1 - Time-resolved photoluminescence of isoelectronic traps in ZnSe1-x Tex semiconductor alloys

AU - Lin, Y. C.

AU - Chou, Wu-Ching

AU - Fan, W. C.

AU - Ku, J. T.

AU - Ke, F. K.

AU - Wang, W. J.

AU - Yang, S. L.

AU - Chen, Wei-Kuo

AU - Chang, Wen-Hao

AU - Chia, C. H.

PY - 2008/12/15

Y1 - 2008/12/15

N2 - Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-x Tex. As the Te concentration increases, the stretching exponent β initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.

AB - Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-x Tex. As the Te concentration increases, the stretching exponent β initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.

UR - http://www.scopus.com/inward/record.url?scp=57849090917&partnerID=8YFLogxK

U2 - 10.1063/1.3054162

DO - 10.1063/1.3054162

M3 - Article

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VL - 93

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241909

ER -

Time-resolved photoluminescence of isoelectronic traps in ZnSe_1-x Te_x semiconductor alloys

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