Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling with Dynamic Response and Multi-Domain Characteristics

Zuopu Zhou, Leming Jiao, Jiuren Zhou, Qiwen Kong, Sheng Luo, Chen Sun, Zijie Zheng, Xiaolin Wang, Dong Zhang, Gan Liu, Gengchiau Liang, Xiao Gong*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Overcoming the drawbacks of the existing ferroelectric tunnel junction (FTJ) models which ignore the dynamic or multi-domain switching behaviors, we develop a more comprehensive FTJ model by combining the Time-Dependent Landau-Ginzburg (TDLG) equations to solve the multi-domain dynamic switching of ferroelectric layer and the Non-Equilibrium Green Function (NEGF) to solve the tunneling current. The model successfully reproduces the experimental results of our fabricated metal-ferroelectrics-insulator-semiconductor (MFIS) FTJ. This model empowers us to predict both the dynamic and multi-state switching of FTJ, showing its promise for applications in the high-density data storage and analog computing.

Original languageEnglish
Pages (from-to)158-161
Number of pages4
JournalIeee Electron Device Letters
Volume43
Issue number1
DOIs
StatePublished - 1 Jan 2022

Keywords

  • dynamic model
  • ferroelectric model
  • ferroelectrics
  • FTJ
  • FTJ model
  • multi-domain

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