Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling with Dynamic Response and Multi-Domain Characteristics

Zuopu Zhou; Leming Jiao; Jiuren Zhou; Qiwen Kong; Sheng Luo; Chen Sun; Zijie Zheng; Xiaolin Wang; Dong Zhang; Gan Liu; Gengchiau Liang; Xiao Gong

doi:10.1109/LED.2021.3128998

Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling with Dynamic Response and Multi-Domain Characteristics

Zuopu Zhou, Leming Jiao, Jiuren Zhou, Qiwen Kong, Sheng Luo, Chen Sun, Zijie Zheng, Xiaolin Wang, Dong Zhang, Gan Liu, Gengchiau Liang, Xiao Gong^*

^*Corresponding author for this work

Institute of Pioneer Semiconductor Innovation

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Overcoming the drawbacks of the existing ferroelectric tunnel junction (FTJ) models which ignore the dynamic or multi-domain switching behaviors, we develop a more comprehensive FTJ model by combining the Time-Dependent Landau-Ginzburg (TDLG) equations to solve the multi-domain dynamic switching of ferroelectric layer and the Non-Equilibrium Green Function (NEGF) to solve the tunneling current. The model successfully reproduces the experimental results of our fabricated metal-ferroelectrics-insulator-semiconductor (MFIS) FTJ. This model empowers us to predict both the dynamic and multi-state switching of FTJ, showing its promise for applications in the high-density data storage and analog computing.

Original language	English
Pages (from-to)	158-161
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	43
Issue number	1
DOIs	https://doi.org/10.1109/LED.2021.3128998
State	Published - 1 Jan 2022

Keywords

FTJ
FTJ model
dynamic model
ferroelectric model
ferroelectrics
multi-domain

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title = "Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling with Dynamic Response and Multi-Domain Characteristics",

abstract = "Overcoming the drawbacks of the existing ferroelectric tunnel junction (FTJ) models which ignore the dynamic or multi-domain switching behaviors, we develop a more comprehensive FTJ model by combining the Time-Dependent Landau-Ginzburg (TDLG) equations to solve the multi-domain dynamic switching of ferroelectric layer and the Non-Equilibrium Green Function (NEGF) to solve the tunneling current. The model successfully reproduces the experimental results of our fabricated metal-ferroelectrics-insulator-semiconductor (MFIS) FTJ. This model empowers us to predict both the dynamic and multi-state switching of FTJ, showing its promise for applications in the high-density data storage and analog computing.",

keywords = "FTJ, FTJ model, dynamic model, ferroelectric model, ferroelectrics, multi-domain",

author = "Zuopu Zhou and Leming Jiao and Jiuren Zhou and Qiwen Kong and Sheng Luo and Chen Sun and Zijie Zheng and Xiaolin Wang and Dong Zhang and Gan Liu and Gengchiau Liang and Xiao Gong",

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doi = "10.1109/LED.2021.3128998",

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AU - Zhou, Zuopu

AU - Jiao, Leming

AU - Zhou, Jiuren

AU - Kong, Qiwen

AU - Luo, Sheng

AU - Sun, Chen

AU - Zheng, Zijie

AU - Wang, Xiaolin

AU - Zhang, Dong

AU - Liu, Gan

AU - Liang, Gengchiau

AU - Gong, Xiao

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KW - FTJ model

KW - dynamic model

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Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling with Dynamic Response and Multi-Domain Characteristics

Abstract

Keywords

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