Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes

Yun Ju Wang; Yi Ting Huang; Bing Yue Tsui; Chao Hsin Chien

doi:10.1109/IPFA49335.2020.9260714

Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes

Yun Ju Wang, Yi Ting Huang, Bing Yue Tsui^*, Chao Hsin Chien

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Effects of NO annealing and isolation structure on the time-dependent dielectric breakdown of gate oxide is studied. NO annealing can reduce the interface state density effectively but the nitrogen in oxide bulk degrades the electric field of 10-year TDDB by 1 MV/cm. LOCOSiC isolation also degrades the electric field by 0.3 MV/cm. The breakdown positions of the LOCOSiC isolation sample distribute along the periphery of the isolation because the gate oxide grown on the Ar ion implantation induced damaged zone is poor. Fortunately, the TDDB degradation due to LOCOSiC process is not sever and the 10-year TDDB electric field of 6 MV/cm is acceptable in most applications.

Original language	English
Title of host publication	2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728161693
DOIs	https://doi.org/10.1109/IPFA49335.2020.9260714
State	Published - 20 Jul 2020
Event	2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020 - Singapore, Singapore Duration: 20 Jul 2020 → 23 Jul 2020

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2020-July

Conference

Conference	2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
Country/Territory	Singapore
City	Singapore
Period	20/07/20 → 23/07/20

Keywords

4H-SiC
gate oxide
isolation
time-dependent dielectric breakdown

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10.1109/IPFA49335.2020.9260714

Cite this

Wang, Y. J., Huang, Y. T., Tsui, B. Y., & Chien, C. H. (2020). Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes. In 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020 [9260714] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2020-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA49335.2020.9260714

Wang, Yun Ju ; Huang, Yi Ting ; Tsui, Bing Yue et al. / Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes. 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes",

abstract = "Effects of NO annealing and isolation structure on the time-dependent dielectric breakdown of gate oxide is studied. NO annealing can reduce the interface state density effectively but the nitrogen in oxide bulk degrades the electric field of 10-year TDDB by 1 MV/cm. LOCOSiC isolation also degrades the electric field by 0.3 MV/cm. The breakdown positions of the LOCOSiC isolation sample distribute along the periphery of the isolation because the gate oxide grown on the Ar ion implantation induced damaged zone is poor. Fortunately, the TDDB degradation due to LOCOSiC process is not sever and the 10-year TDDB electric field of 6 MV/cm is acceptable in most applications. ",

keywords = "4H-SiC, gate oxide, isolation, time-dependent dielectric breakdown",

author = "Wang, {Yun Ju} and Huang, {Yi Ting} and Tsui, {Bing Yue} and Chien, {Chao Hsin}",

year = "2020",

month = jul,

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doi = "10.1109/IPFA49335.2020.9260714",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

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booktitle = "2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020",

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Wang, YJ, Huang, YT, Tsui, BY & Chien, CH 2020, Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes. in 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020., 9260714, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2020-July, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020, Singapore, Singapore, 20/07/20. https://doi.org/10.1109/IPFA49335.2020.9260714

Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes. / Wang, Yun Ju; Huang, Yi Ting; Tsui, Bing Yue et al.

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9260714 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2020-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes

AU - Wang, Yun Ju

AU - Huang, Yi Ting

AU - Tsui, Bing Yue

AU - Chien, Chao Hsin

PY - 2020/7/20

Y1 - 2020/7/20

N2 - Effects of NO annealing and isolation structure on the time-dependent dielectric breakdown of gate oxide is studied. NO annealing can reduce the interface state density effectively but the nitrogen in oxide bulk degrades the electric field of 10-year TDDB by 1 MV/cm. LOCOSiC isolation also degrades the electric field by 0.3 MV/cm. The breakdown positions of the LOCOSiC isolation sample distribute along the periphery of the isolation because the gate oxide grown on the Ar ion implantation induced damaged zone is poor. Fortunately, the TDDB degradation due to LOCOSiC process is not sever and the 10-year TDDB electric field of 6 MV/cm is acceptable in most applications.

AB - Effects of NO annealing and isolation structure on the time-dependent dielectric breakdown of gate oxide is studied. NO annealing can reduce the interface state density effectively but the nitrogen in oxide bulk degrades the electric field of 10-year TDDB by 1 MV/cm. LOCOSiC isolation also degrades the electric field by 0.3 MV/cm. The breakdown positions of the LOCOSiC isolation sample distribute along the periphery of the isolation because the gate oxide grown on the Ar ion implantation induced damaged zone is poor. Fortunately, the TDDB degradation due to LOCOSiC process is not sever and the 10-year TDDB electric field of 6 MV/cm is acceptable in most applications.

KW - 4H-SiC

KW - gate oxide

KW - isolation

KW - time-dependent dielectric breakdown

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Wang YJ, Huang YT, Tsui BY , Chien CH. Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes. In 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9260714. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA49335.2020.9260714

Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes

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