Ti supersaturated Si by microwave annealing processes

J. Olea*, G. González-Díaz, D. Pastor, E. García-Hemme, D. Caudevilla, S. Algaidy, F. Pérez-Zenteno, S. Duarte-Cano, R. García-Hernansanz, A. del Prado, E. San Andrés, I. Mártil, Yao Jen Lee, Tzu Chieh Hong, Tien Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Microwave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth profiles indicate that diffusion is avoided once recrystallization is produced. Finally, the electronic transport properties measurements point to a decoupling effect between the Si:Ti layer and the substrate. The implanted layer present also a shallow donor and very high Hall mobility.

Original languageEnglish
Article number024004
JournalSemiconductor Science and Technology
Issue number2
StatePublished - Feb 2023


  • implantation
  • infrared
  • microelectronics
  • microwave
  • silicon
  • supersaturated
  • titanium


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