TY - GEN
T1 - Thomas-Fermi interfacial screening with voltage-dependence of the screening lengths and influence of oxygen vacancies in MFTJs
AU - Jagga, Deepali
AU - Useinov, Artur
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Magnetic tunnel junctions with ferroelectric (FE) barrier (MFTJs) are simulated within modified transport model and compared with experimental samples. As a novelty, linearized approach of Thomas Fermi screening is utilized for a simulation of the tunneling behavior through the magnetic metal/dielectric, magnetic metal/ferroelectric (MM/DE, MM/FE) and non-magnetic metal/ferroelectric (NM/FE) interfaces, where the screening length for each interface changes with applied voltage, accounting the growing penetration of the electric field into the metal. In this work, current density (J) and tunnel electroresistance (TER) vs the applied voltage (V) are compared for NM/FE(3nm)/MM and NM/DE/ FE(5nm)/DE/MM junctions. In addition, the impact of oxygen vacancies located on the interfaces is incorporated in the model for NM/DE/FE(5nm)/DE/MM system. As a result, theoretical model modification allows to reproduce experimental data with a better precision than previous approach with a constant screening lengths.
AB - Magnetic tunnel junctions with ferroelectric (FE) barrier (MFTJs) are simulated within modified transport model and compared with experimental samples. As a novelty, linearized approach of Thomas Fermi screening is utilized for a simulation of the tunneling behavior through the magnetic metal/dielectric, magnetic metal/ferroelectric (MM/DE, MM/FE) and non-magnetic metal/ferroelectric (NM/FE) interfaces, where the screening length for each interface changes with applied voltage, accounting the growing penetration of the electric field into the metal. In this work, current density (J) and tunnel electroresistance (TER) vs the applied voltage (V) are compared for NM/FE(3nm)/MM and NM/DE/ FE(5nm)/DE/MM junctions. In addition, the impact of oxygen vacancies located on the interfaces is incorporated in the model for NM/DE/FE(5nm)/DE/MM system. As a result, theoretical model modification allows to reproduce experimental data with a better precision than previous approach with a constant screening lengths.
UR - http://www.scopus.com/inward/record.url?scp=85162992359&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134310
DO - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134310
M3 - Conference contribution
AN - SCOPUS:85162992359
T3 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
BT - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
Y2 - 17 April 2023 through 20 April 2023
ER -