Thin Polyoxide on the Top of Poly-Si Gate to Suppress Boron Penetration for pMOS

Yung Hao Lin; Chung Len Lee; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/55.382227

Thin Polyoxide on the Top of Poly-Si Gate to Suppress Boron Penetration for pMOS

Yung Hao Lin, Chung Len Lee, Tan Fu Lei, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF+2 in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.

Original language	English
Pages (from-to)	164-165
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	16
Issue number	5
DOIs	https://doi.org/10.1109/55.382227
State	Published - 1 Jan 1995

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10.1109/55.382227

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@article{6f0f5c337f22414b8a2fa1f0650653f9,

title = "Thin Polyoxide on the Top of Poly-Si Gate to Suppress Boron Penetration for pMOS",

abstract = "A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF+2 in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.",

author = "Lin, {Yung Hao} and Lee, {Chung Len} and Lei, {Tan Fu} and Tien-Sheng Chao",

year = "1995",

month = jan,

day = "1",

doi = "10.1109/55.382227",

language = "English",

volume = "16",

pages = "164--165",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Thin Polyoxide on the Top of Poly-Si Gate to Suppress Boron Penetration for pMOS

AU - Lin, Yung Hao

AU - Lee, Chung Len

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF+2 in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.

AB - A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF+2 in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0029306816&partnerID=8YFLogxK

U2 - 10.1109/55.382227

DO - 10.1109/55.382227

M3 - Article

AN - SCOPUS:0029306816

SN - 0741-3106

VL - 16

SP - 164

EP - 165

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Thin Polyoxide on the Top of Poly-Si Gate to Suppress Boron Penetration for pMOS

Abstract

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