A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF+2 in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.
|Number of pages||2|
|Journal||IEEE Electron Device Letters|
|State||Published - 1 Jan 1995|