Thin-film transistors based on poly(3,3″-dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability

Sara M C Vieira, Chien-Wen Hsieh, Husnu E. Unalan, Sefa Dag, Gehan A J Amaratunga, William I. Milne

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The ambient stability of thin-film transistors (TFTs) based on zinc oxide (ZnO) nanowires embedded in poly(3,3″-dialkyl-quarterthiophene) was monitored through time dependence of electrical characteristics over a period of 16 months. The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2× 10-4cm2/V s. After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3× 10-5 cm2/V s. Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required.

Original languageEnglish
Article number102106
JournalApplied Physics Letters
Volume98
Issue number10
DOIs
StatePublished - 7 Mar 2011

Fingerprint

Dive into the research topics of 'Thin-film transistors based on poly(3,3″-dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability'. Together they form a unique fingerprint.

Cite this