TY - JOUR
T1 - THIN ALLOY FILMS FOR METALLIZATION IN MICROELECTRONIC DEVICES.
AU - Tu, King-Ning
PY - 1982/1/1
Y1 - 1982/1/1
N2 - The so-called ″submicron structure″ is the measure of lateral and vertical dimensions of circuit units such as contacts, gates, and interconnecting lines made mostly of metallic films on semiconductors. In most thin-film multilayered structures used in present devices, each layer is typically a pure metal film. When several of them are stacked together by sequential deposition, the structure is unstable, so interdiffusion and reactions will occur between neighboring layers. The stability of multilayered structures must be improved. H is shown that the use of alloys seems to solve the instability problems.
AB - The so-called ″submicron structure″ is the measure of lateral and vertical dimensions of circuit units such as contacts, gates, and interconnecting lines made mostly of metallic films on semiconductors. In most thin-film multilayered structures used in present devices, each layer is typically a pure metal film. When several of them are stacked together by sequential deposition, the structure is unstable, so interdiffusion and reactions will occur between neighboring layers. The stability of multilayered structures must be improved. H is shown that the use of alloys seems to solve the instability problems.
UR - http://www.scopus.com/inward/record.url?scp=0020272597&partnerID=8YFLogxK
U2 - doi.org/10.1016/B978-0-12-341824-1.50012-4
DO - doi.org/10.1016/B978-0-12-341824-1.50012-4
M3 - Article
AN - SCOPUS:0020272597
SN - 0161-9160
VL - 24
SP - 237
EP - 282
JO - Treatise on Materials Science and Technology
JF - Treatise on Materials Science and Technology
ER -