Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer

Tien-Sheng Chao; C. L. Lee; T. F. Lei

doi:10.1049/el:19930774

Thickness determination of poly-Si/poly-oxide/poly-Si/SiO₂/Si structure by ellipsometer

Tien-Sheng Chao, C. L. Lee, T. F. Lei

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

Abstract

An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO₂/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.

Original language	English
Pages (from-to)	1157-1159
Number of pages	3
Journal	Electronics Letters
Volume	29
Issue number	13
DOIs	https://doi.org/10.1049/el:19930774
State	Published - 1 Jan 1993

Keywords

Ellipsometry
Measurement
Thin films

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10.1049/el:19930774

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title = "Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer",

abstract = "An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.",

keywords = "Ellipsometry, Measurement, Thin films",

author = "Tien-Sheng Chao and Lee, {C. L.} and Lei, {T. F.}",

year = "1993",

month = jan,

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doi = "10.1049/el:19930774",

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journal = "Electronics Letters",

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T1 - Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer

AU - Chao, Tien-Sheng

AU - Lee, C. L.

AU - Lei, T. F.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.

AB - An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.

KW - Ellipsometry

KW - Measurement

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=0027612459&partnerID=8YFLogxK

U2 - 10.1049/el:19930774

DO - 10.1049/el:19930774

M3 - Article

AN - SCOPUS:0027612459

SN - 0013-5194

VL - 29

SP - 1157

EP - 1159

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Thickness determination of poly-Si/poly-oxide/poly-Si/SiO₂/Si structure by ellipsometer

Abstract

Keywords

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