Thermochemical reaction of ZrOx(Ny) interfaces on Ge and Si substrates

Chao Ching Cheng*, Chao-Hsin Chien, Je Hung Lin, Chun Yen Chang, Guang Li Luo, Chun Hui Yang, Shih Lu Hsu

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    10 Scopus citations

    Abstract

    We have studied the thermochemical characteristics of ZrO x(Ny)/Ge and Si interfaces by employing postdeposition annealing. We found that Ge oxide species severely desorbed from the inherent interfacial layer, which was speculated to retard the formation of Zr germanate during high-temperature processing. These unique features enable ZrO x(Ny)/Ge gate stack to show a better equivalent-oxide-thickness scalability as compared to ZrOx(N y)/Si gate stack. However, the volatilization of GeO x-contained interfacial layer also caused the formation of small pits and/or holes in the overlying ZrOx(Ny) gate dielectrics, which was expected to cause deterioration in the electrical properties of fabricated high-k/Ge devices.

    Original languageEnglish
    Article number012905
    JournalApplied Physics Letters
    Volume89
    Issue number1
    DOIs
    StatePublished - 2006

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