Thermal stability of SiGe dynamic threshold pMOSFET

W. M. Liao; C. F. Shih; Pei-Wen Li

doi:10.1109/IPFA.2005.1469147

Thermal stability of SiGe dynamic threshold pMOSFET

W. M. Liao^*, C. F. Shih, Pei-Wen Li

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Original language	English
Pages	137-140
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2005.1469147
State	Published - Jun 2005
Event	12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, Singapore Duration: 27 Jun 2005 → 1 Jul 2005

Conference

Conference	12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005
Country/Territory	Singapore
City	Singapore
Period	27/06/05 → 1/07/05

Access to Document

10.1109/IPFA.2005.1469147

Cite this

@conference{da5756e935b84508ac4e7306797742b5,

title = "Thermal stability of SiGe dynamic threshold pMOSFET",

author = "Liao, {W. M.} and Shih, {C. F.} and Pei-Wen Li",

year = "2005",

month = jun,

doi = "10.1109/IPFA.2005.1469147",

language = "English",

pages = "137--140",

note = "12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 ; Conference date: 27-06-2005 Through 01-07-2005",

}

TY - CONF

T1 - Thermal stability of SiGe dynamic threshold pMOSFET

AU - Liao, W. M.

AU - Shih, C. F.

AU - Li, Pei-Wen

PY - 2005/6

Y1 - 2005/6

UR - http://www.scopus.com/inward/record.url?scp=28044444733&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2005.1469147

DO - 10.1109/IPFA.2005.1469147

M3 - Paper

AN - SCOPUS:28044444733

SP - 137

EP - 140

T2 - 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005

Y2 - 27 June 2005 through 1 July 2005

ER -

Thermal stability of SiGe dynamic threshold pMOSFET

Conference

Access to Document

Other files and links

Cite this