Thermal Stability of Shallow Ge N+-P Junction with Thin GeSn Top Layer

Hsiu Hsien Liao; Yi Ju Chen; Bing Yue Tsui

doi:10.1109/VLSI-TSA.2019.8804654

Thermal Stability of Shallow Ge N⁺-P Junction with Thin GeSn Top Layer

Hsiu Hsien Liao, Yi Ju Chen, Bing Yue Tsui^*

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Thermal stability of the Ge N⁺-P junction with thin GeSn top Layer is evaluated in this work. Thin GeSn itself would not increase junction leakage current although its bandgap is narrower than Ge. However, high dose ion implantation would damage the GeSn layer and Ge substrate so that the diffusion coefficient of Sn atom in Ge is enhanced. In this case, thermal annealing higher than 500 °C would degrade junction leakage current. It is thus suggested that low defects doping technique must be developed.

Original language	English
Title of host publication	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728109428
DOIs	https://doi.org/10.1109/VLSI-TSA.2019.8804654
State	Published - Apr 2019
Event	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 - Hsinchu, Taiwan Duration: 22 Apr 2019 → 25 Apr 2019

Publication series

Name	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Conference

Conference	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Country/Territory	Taiwan
City	Hsinchu
Period	22/04/19 → 25/04/19

Access to Document

10.1109/VLSI-TSA.2019.8804654

Cite this

Liao, H. H., Chen, Y. J., & Tsui, B. Y. (2019). Thermal Stability of Shallow Ge N⁺-P Junction with Thin GeSn Top Layer. In 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 Article 8804654 (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2019.8804654

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abstract = "Thermal stability of the Ge N+-P junction with thin GeSn top Layer is evaluated in this work. Thin GeSn itself would not increase junction leakage current although its bandgap is narrower than Ge. However, high dose ion implantation would damage the GeSn layer and Ge substrate so that the diffusion coefficient of Sn atom in Ge is enhanced. In this case, thermal annealing higher than 500 °C would degrade junction leakage current. It is thus suggested that low defects doping technique must be developed.",

author = "Liao, {Hsiu Hsien} and Chen, {Yi Ju} and Tsui, {Bing Yue}",

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Liao, HH, Chen, YJ & Tsui, BY 2019, Thermal Stability of Shallow Ge N⁺-P Junction with Thin GeSn Top Layer. in 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019., 8804654, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, Institute of Electrical and Electronics Engineers Inc., 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, Hsinchu, Taiwan, 22/04/19. https://doi.org/10.1109/VLSI-TSA.2019.8804654

Thermal Stability of Shallow Ge N⁺-P Junction with Thin GeSn Top Layer. / Liao, Hsiu Hsien; Chen, Yi Ju; Tsui, Bing Yue.
2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8804654 (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Thermal stability of the Ge N+-P junction with thin GeSn top Layer is evaluated in this work. Thin GeSn itself would not increase junction leakage current although its bandgap is narrower than Ge. However, high dose ion implantation would damage the GeSn layer and Ge substrate so that the diffusion coefficient of Sn atom in Ge is enhanced. In this case, thermal annealing higher than 500 °C would degrade junction leakage current. It is thus suggested that low defects doping technique must be developed.

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Liao HH, Chen YJ, Tsui BY. Thermal Stability of Shallow Ge N⁺-P Junction with Thin GeSn Top Layer. In 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8804654. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019). doi: 10.1109/VLSI-TSA.2019.8804654