Thermal stability of plasma-treated ohmic contacts to n-GaN

Chien Chi Lee; Sheng-Di Lin; Chien Ping Lee; Meng Hsin Yeh; Wei-I Lee; Cheng Ta Kuo

doi:10.1143/JJAP.42.2313

Thermal stability of plasma-treated ohmic contacts to n-GaN

Chien Chi Lee, Sheng-Di Lin, Chien Ping Lee^*, Meng Hsin Yeh, Wei-I Lee, Cheng Ta Kuo

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this study, the thermal stability of plasma-treated ohmic contacts by either Cl₂/Ar or Ar plasma to n-GaN was investigated by high-temperature aging tests. With proper plasma treatment, ohmic contacts to n-GaN have a lower contact resistance than those without plasma treatment. High-temperature aging tests were performed at temperatures ranging from 400 to 600°C for 2h in N₂ or air ambient. No apparent electrical degradation in contact resistance was observed after aging, showing the thermal stability of plasma-treated ohmic contacts is not affected by the recovery of plasma-induced damages on the wafer surface.

Original language	English
Pages (from-to)	2313-2315
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.42.2313
State	Published - Apr 2003

Keywords

GaN
High-temperature aging test
Ohmic contact
Plasma treatment
Specific contact resistance
Thermal stability

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10.1143/JJAP.42.2313

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title = "Thermal stability of plasma-treated ohmic contacts to n-GaN",

abstract = "In this study, the thermal stability of plasma-treated ohmic contacts by either Cl2/Ar or Ar plasma to n-GaN was investigated by high-temperature aging tests. With proper plasma treatment, ohmic contacts to n-GaN have a lower contact resistance than those without plasma treatment. High-temperature aging tests were performed at temperatures ranging from 400 to 600°C for 2h in N2 or air ambient. No apparent electrical degradation in contact resistance was observed after aging, showing the thermal stability of plasma-treated ohmic contacts is not affected by the recovery of plasma-induced damages on the wafer surface.",

keywords = "GaN, High-temperature aging test, Ohmic contact, Plasma treatment, Specific contact resistance, Thermal stability",

author = "Lee, {Chien Chi} and Sheng-Di Lin and Lee, {Chien Ping} and Yeh, {Meng Hsin} and Wei-I Lee and Kuo, {Cheng Ta}",

year = "2003",

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doi = "10.1143/JJAP.42.2313",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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T1 - Thermal stability of plasma-treated ohmic contacts to n-GaN

AU - Lee, Chien Chi

AU - Lin, Sheng-Di

AU - Lee, Chien Ping

AU - Yeh, Meng Hsin

AU - Lee, Wei-I

AU - Kuo, Cheng Ta

PY - 2003/4

Y1 - 2003/4

N2 - In this study, the thermal stability of plasma-treated ohmic contacts by either Cl2/Ar or Ar plasma to n-GaN was investigated by high-temperature aging tests. With proper plasma treatment, ohmic contacts to n-GaN have a lower contact resistance than those without plasma treatment. High-temperature aging tests were performed at temperatures ranging from 400 to 600°C for 2h in N2 or air ambient. No apparent electrical degradation in contact resistance was observed after aging, showing the thermal stability of plasma-treated ohmic contacts is not affected by the recovery of plasma-induced damages on the wafer surface.

AB - In this study, the thermal stability of plasma-treated ohmic contacts by either Cl2/Ar or Ar plasma to n-GaN was investigated by high-temperature aging tests. With proper plasma treatment, ohmic contacts to n-GaN have a lower contact resistance than those without plasma treatment. High-temperature aging tests were performed at temperatures ranging from 400 to 600°C for 2h in N2 or air ambient. No apparent electrical degradation in contact resistance was observed after aging, showing the thermal stability of plasma-treated ohmic contacts is not affected by the recovery of plasma-induced damages on the wafer surface.

KW - GaN

KW - High-temperature aging test

KW - Ohmic contact

KW - Plasma treatment

KW - Specific contact resistance

KW - Thermal stability

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U2 - 10.1143/JJAP.42.2313

DO - 10.1143/JJAP.42.2313

M3 - Article

AN - SCOPUS:0038686315

SN - 0021-4922

VL - 42

SP - 2313

EP - 2315

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 B

ER -

Thermal stability of plasma-treated ohmic contacts to n-GaN

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