TY - GEN
T1 - Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer
AU - Kuo, Hao-Chung
AU - Lin, Chun-Hsiung
AU - Moser, B. C.
AU - Hsia, H.
AU - Tang, Z.
AU - Chen, Haydn
AU - Feng, M.
AU - Stillman, G. E.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - We present the studies of the thermal stability of various metal including Au, Ti, Pt, Pd and Pt/Ti/Pt/Au Schottky contacts on strained Ga0.2In0.8P/InP semiconductors. Auger electron spectroscopy (AES) analysis and cross-sectional TEM of the thermally annealed Schottky diode were performed to investigate the failure mechanism. For Pt/Ti/Pt/Au schottky contacts on strained GalnP/InP, no significant change was found for samples annealed up to 350°C. However, a drastic degradation of the barrier height and the ideality factor was observed in samples annealed at 400°C, which may be caused by the interdiffusion and penetration of metals into the semiconductor. Finally InGaAs/InP doped channel heterojunction FET's (DC-HFET's) with a GaInP Schottky barrier enhancement layer (SBEL) were grown and fabricated. The 0.25 μm gate-length devices showed excellent DC and RF performance, with an ft of 117 GHz and an fmax of 168 GHz.
AB - We present the studies of the thermal stability of various metal including Au, Ti, Pt, Pd and Pt/Ti/Pt/Au Schottky contacts on strained Ga0.2In0.8P/InP semiconductors. Auger electron spectroscopy (AES) analysis and cross-sectional TEM of the thermally annealed Schottky diode were performed to investigate the failure mechanism. For Pt/Ti/Pt/Au schottky contacts on strained GalnP/InP, no significant change was found for samples annealed up to 350°C. However, a drastic degradation of the barrier height and the ideality factor was observed in samples annealed at 400°C, which may be caused by the interdiffusion and penetration of metals into the semiconductor. Finally InGaAs/InP doped channel heterojunction FET's (DC-HFET's) with a GaInP Schottky barrier enhancement layer (SBEL) were grown and fabricated. The 0.25 μm gate-length devices showed excellent DC and RF performance, with an ft of 117 GHz and an fmax of 168 GHz.
UR - http://www.scopus.com/inward/record.url?scp=0033334576&partnerID=8YFLogxK
U2 - 10.1557/PROC-535-231
DO - 10.1557/PROC-535-231
M3 - Conference contribution
AN - SCOPUS:0033334576
SN - 1558994416
SN - 9781558994416
T3 - Materials Research Society Symposium - Proceedings
SP - 231
EP - 236
BT - Materials Research Society Symposium - Proceedings
PB - Materials Research Society
T2 - Proceedings of the 1998 MRS Fall Meeting - Symposium D: 'Integration of Dissimilar Materials in Micro- and Optoelectronics - Symposium I: 'III-V and SiGe Group IV Device/IC Processing Challeneges for Commercial Applications'
Y2 - 30 November 1998 through 3 December 1998
ER -