Thermal diffusivity in diamond, SiC xN y and BC xN y

S. Chattopadhyay; S. C. Chien; L. C. Chen; K. H. Chen; H. Y. Lee

doi:10.1016/S0925-9635(01)00606-9

Thermal diffusivity in diamond, SiC _xN _y and BC _xN _y

S. Chattopadhyay^*, S. C. Chien, L. C. Chen, K. H. Chen, H. Y. Lee

^*Corresponding author for this work

Institute of Biophotonics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Thermal diffusivity (α) of free standing diamond, amorphous silicon carbon nitride (a-SiC _xN _y) and boron carbon nitride (a-BC _xN _y) thin films on crystalline silicon, has been studied using the travelling wave technique. Thermal diffusivity in all of them was found to depend on the microstructure. For a-SiC _xN _y and a-BC _xN _y thin films two distinct regimes of high and low carbon contents were observed in which the microstructure changed considerably and that has a profound effect on the thermal diffusivity. The defective C(sp)-N phase plays a key role in determining the film properties.

Original language	English
Pages (from-to)	708-713
Number of pages	6
Journal	Diamond and Related Materials
Volume	11
Issue number	3-6
DOIs	https://doi.org/10.1016/S0925-9635(01)00606-9
State	Published - Mar 2002

Keywords

Microstructure
Photoelectron spectroscopy
Physical vapour deposition
Thermal conductivity

Access to Document

10.1016/S0925-9635(01)00606-9

Cite this

@article{741a33ee27384998ae800cc1c671a304,

title = "Thermal diffusivity in diamond, SiC xN y and BC xN y ",

abstract = "Thermal diffusivity (α) of free standing diamond, amorphous silicon carbon nitride (a-SiC xN y) and boron carbon nitride (a-BC xN y) thin films on crystalline silicon, has been studied using the travelling wave technique. Thermal diffusivity in all of them was found to depend on the microstructure. For a-SiC xN y and a-BC xN y thin films two distinct regimes of high and low carbon contents were observed in which the microstructure changed considerably and that has a profound effect on the thermal diffusivity. The defective C(sp)-N phase plays a key role in determining the film properties.",

keywords = "Microstructure, Photoelectron spectroscopy, Physical vapour deposition, Thermal conductivity",

author = "S. Chattopadhyay and Chien, \{S. C.\} and Chen, \{L. C.\} and Chen, \{K. H.\} and Lee, \{H. Y.\}",

note = "Funding Information: This work was carried out under a project funded by the National Science Council, Taiwan, under Contract Nos. NSC89-2112-M002-085, and NSC89-2119-M001-011. We acknowledge the help of Prof. P. Hess and G. Lehmann, of the Institute of Physical Chemistry, University of Heidelberg, Germany, for the density measurements of the a-SiC x N y films and many helpful discussions. One of the author (S.C) acknowledges the award of a post-doctoral fellowship by the National Science Council, Taiwan.",

year = "2002",

month = mar,

doi = "10.1016/S0925-9635(01)00606-9",

language = "English",

volume = "11",

pages = "708--713",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

number = "3-6",

}

TY - JOUR

T1 - Thermal diffusivity in diamond, SiC xN y and BC xN y

AU - Chattopadhyay, S.

AU - Chien, S. C.

AU - Chen, L. C.

AU - Chen, K. H.

AU - Lee, H. Y.

N1 - Funding Information: This work was carried out under a project funded by the National Science Council, Taiwan, under Contract Nos. NSC89-2112-M002-085, and NSC89-2119-M001-011. We acknowledge the help of Prof. P. Hess and G. Lehmann, of the Institute of Physical Chemistry, University of Heidelberg, Germany, for the density measurements of the a-SiC x N y films and many helpful discussions. One of the author (S.C) acknowledges the award of a post-doctoral fellowship by the National Science Council, Taiwan.

PY - 2002/3

Y1 - 2002/3

N2 - Thermal diffusivity (α) of free standing diamond, amorphous silicon carbon nitride (a-SiC xN y) and boron carbon nitride (a-BC xN y) thin films on crystalline silicon, has been studied using the travelling wave technique. Thermal diffusivity in all of them was found to depend on the microstructure. For a-SiC xN y and a-BC xN y thin films two distinct regimes of high and low carbon contents were observed in which the microstructure changed considerably and that has a profound effect on the thermal diffusivity. The defective C(sp)-N phase plays a key role in determining the film properties.

AB - Thermal diffusivity (α) of free standing diamond, amorphous silicon carbon nitride (a-SiC xN y) and boron carbon nitride (a-BC xN y) thin films on crystalline silicon, has been studied using the travelling wave technique. Thermal diffusivity in all of them was found to depend on the microstructure. For a-SiC xN y and a-BC xN y thin films two distinct regimes of high and low carbon contents were observed in which the microstructure changed considerably and that has a profound effect on the thermal diffusivity. The defective C(sp)-N phase plays a key role in determining the film properties.

KW - Microstructure

KW - Photoelectron spectroscopy

KW - Physical vapour deposition

KW - Thermal conductivity

UR - https://www.scopus.com/pages/publications/0036508105

U2 - 10.1016/S0925-9635(01)00606-9

DO - 10.1016/S0925-9635(01)00606-9

M3 - Article

AN - SCOPUS:0036508105

SN - 0925-9635

VL - 11

SP - 708

EP - 713

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-6

ER -

Thermal diffusivity in diamond, SiC _xN _y and BC _xN _y

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this