Abstract
Thermal diffusivity (α) of free standing diamond, amorphous silicon carbon nitride (a-SiC xN y) and boron carbon nitride (a-BC xN y) thin films on crystalline silicon, has been studied using the travelling wave technique. Thermal diffusivity in all of them was found to depend on the microstructure. For a-SiC xN y and a-BC xN y thin films two distinct regimes of high and low carbon contents were observed in which the microstructure changed considerably and that has a profound effect on the thermal diffusivity. The defective C(sp)-N phase plays a key role in determining the film properties.
Original language | English |
---|---|
Pages (from-to) | 708-713 |
Number of pages | 6 |
Journal | Diamond and Related Materials |
Volume | 11 |
Issue number | 3-6 |
DOIs | |
State | Published - Mar 2002 |
Keywords
- Microstructure
- Photoelectron spectroscopy
- Physical vapour deposition
- Thermal conductivity