Thermal diffusivity in diamond, SiC xN y and BC xN y

S. Chattopadhyay*, S. C. Chien, L. C. Chen, K. H. Chen, H. Y. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Thermal diffusivity (α) of free standing diamond, amorphous silicon carbon nitride (a-SiC xN y) and boron carbon nitride (a-BC xN y) thin films on crystalline silicon, has been studied using the travelling wave technique. Thermal diffusivity in all of them was found to depend on the microstructure. For a-SiC xN y and a-BC xN y thin films two distinct regimes of high and low carbon contents were observed in which the microstructure changed considerably and that has a profound effect on the thermal diffusivity. The defective C(sp)-N phase plays a key role in determining the film properties.

Original languageEnglish
Pages (from-to)708-713
Number of pages6
JournalDiamond and Related Materials
Issue number3-6
StatePublished - Mar 2002


  • Microstructure
  • Photoelectron spectroscopy
  • Physical vapour deposition
  • Thermal conductivity


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