Thermal diffusivity in amorphous silicon carbon nitride thin films by the traveling wave technique

S. Chattopadhyay*, L. C. Chen, C. T. Wu, K. H. Chen, J. S. Wu, Y. F. Chen, G. Lehmann, P. Hess

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Thermal diffusivity of thin films of amorphous silicon carbon nitride, prepared by ion beam sputtering was studied by traveling wave technique. The change of thermal diffusivity with carbon content was reported in amorphous silicon carbon nitride samples. There was a decrease in diffusivity values for higher carbon concentrations. A similar variation was observed for the density of the films as a function of carbon content.

Original languageEnglish
Pages (from-to)332-334
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number3
DOIs
StatePublished - 16 Jul 2001

Fingerprint

Dive into the research topics of 'Thermal diffusivity in amorphous silicon carbon nitride thin films by the traveling wave technique'. Together they form a unique fingerprint.

Cite this