Abstract
Thermal diffusivity of thin films of amorphous silicon carbon nitride, prepared by ion beam sputtering was studied by traveling wave technique. The change of thermal diffusivity with carbon content was reported in amorphous silicon carbon nitride samples. There was a decrease in diffusivity values for higher carbon concentrations. A similar variation was observed for the density of the films as a function of carbon content.
Original language | English |
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Pages (from-to) | 332-334 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 3 |
DOIs | |
State | Published - 16 Jul 2001 |