Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications

Ming Yi Lee; Min Hui Chuang; Yi-Ming Li; Seiji Samukawa

doi:10.1109/SISPAD.2019.8870404

Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications

Ming Yi Lee^*, Min Hui Chuang, Yi-Ming Li, Seiji Samukawa

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The electronic and phononic band structure of silicon nanowires embedded in SiGeo.3 is calculated and used to investigate its effect on the thermoelectric properties by Landauer approach. The contribution from elec-Tron/hole on power factor and electronic thermal con-ductance is less than that from phonons on lattice ther-mal conductance.

Original language	English
Title of host publication	Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
Editors	Francesco Driussi
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728109404
DOIs	https://doi.org/10.1109/SISPAD.2019.8870404
State	Published - Sep 2019
Event	24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy Duration: 4 Sep 2019 → 6 Sep 2019

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2019-September

Conference

Conference	24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
Country/Territory	Italy
City	Udine
Period	4/09/19 → 6/09/19

Keywords

Landauer Approach
Silicon Nanowire
Ther-moelectric

Access to Document

10.1109/SISPAD.2019.8870404

Cite this

Lee, M. Y., Chuang, M. H., Li, Y.-M., & Samukawa, S. (2019). Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications. In F. Driussi (Ed.), Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 Article 8870404 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2019-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2019.8870404

Lee, Ming Yi ; Chuang, Min Hui ; Li, Yi-Ming et al. / Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications. Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. editor / Francesco Driussi. Institute of Electrical and Electronics Engineers Inc., 2019. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{d07551fbaed444d8a98dc3855b896379,

title = "Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications",

abstract = "The electronic and phononic band structure of silicon nanowires embedded in SiGeo.3 is calculated and used to investigate its effect on the thermoelectric properties by Landauer approach. The contribution from elec-Tron/hole on power factor and electronic thermal con-ductance is less than that from phonons on lattice ther-mal conductance.",

keywords = "Landauer Approach, Silicon Nanowire, Ther-moelectric",

author = "Lee, {Ming Yi} and Chuang, {Min Hui} and Yi-Ming Li and Seiji Samukawa",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 ; Conference date: 04-09-2019 Through 06-09-2019",

year = "2019",

month = sep,

doi = "10.1109/SISPAD.2019.8870404",

language = "English",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Francesco Driussi",

booktitle = "Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019",

address = "美國",

}

Lee, MY, Chuang, MH, Li, Y-M & Samukawa, S 2019, Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications. in F Driussi (ed.), Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019., 8870404, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2019-September, Institute of Electrical and Electronics Engineers Inc., 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, Udine, Italy, 4/09/19. https://doi.org/10.1109/SISPAD.2019.8870404

Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications. / Lee, Ming Yi; Chuang, Min Hui; Li, Yi-Ming et al.
Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. ed. / Francesco Driussi. Institute of Electrical and Electronics Engineers Inc., 2019. 8870404 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications

AU - Lee, Ming Yi

AU - Chuang, Min Hui

AU - Li, Yi-Ming

AU - Samukawa, Seiji

PY - 2019/9

Y1 - 2019/9

N2 - The electronic and phononic band structure of silicon nanowires embedded in SiGeo.3 is calculated and used to investigate its effect on the thermoelectric properties by Landauer approach. The contribution from elec-Tron/hole on power factor and electronic thermal con-ductance is less than that from phonons on lattice ther-mal conductance.

AB - The electronic and phononic band structure of silicon nanowires embedded in SiGeo.3 is calculated and used to investigate its effect on the thermoelectric properties by Landauer approach. The contribution from elec-Tron/hole on power factor and electronic thermal con-ductance is less than that from phonons on lattice ther-mal conductance.

KW - Landauer Approach

KW - Silicon Nanowire

KW - Ther-moelectric

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U2 - 10.1109/SISPAD.2019.8870404

DO - 10.1109/SISPAD.2019.8870404

M3 - Conference contribution

AN - SCOPUS:85074337650

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

BT - Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019

A2 - Driussi, Francesco

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019

Y2 - 4 September 2019 through 6 September 2019

ER -

Lee MY, Chuang MH, Li YM, Samukawa S. Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications. In Driussi F, editor, Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8870404. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2019.8870404

Thermal conductivity of silicon nanowire using landauer approach for thermoelectric applications

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