Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes

Chin Yuan Hsu; Wen How Lan; Yew-Chuhg Wu

doi:10.1143/JJAP.44.7424

Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes

Chin Yuan Hsu, Wen How Lan^*, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for p-type contacts. The current-voltage (I-V) characteristics of the devices have been studied. When annealed at 700°C, the p-n junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in p-n junctions at high annealing temperatures.

Original language	English
Pages (from-to)	7424-7426
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7424
State	Published - 11 Oct 2005

Keywords

Dislocation
GaN
ITO contact
LEDs
Leakage

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10.1143/JJAP.44.7424

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title = "Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes",

abstract = "We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for p-type contacts. The current-voltage (I-V) characteristics of the devices have been studied. When annealed at 700°C, the p-n junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in p-n junctions at high annealing temperatures.",

keywords = "Dislocation, GaN, ITO contact, LEDs, Leakage",

author = "Hsu, {Chin Yuan} and Lan, {Wen How} and Yew-Chuhg Wu",

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T1 - Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes

AU - Hsu, Chin Yuan

AU - Lan, Wen How

AU - Wu, Yew-Chuhg

PY - 2005/10/11

Y1 - 2005/10/11

N2 - We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for p-type contacts. The current-voltage (I-V) characteristics of the devices have been studied. When annealed at 700°C, the p-n junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in p-n junctions at high annealing temperatures.

AB - We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for p-type contacts. The current-voltage (I-V) characteristics of the devices have been studied. When annealed at 700°C, the p-n junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in p-n junctions at high annealing temperatures.

KW - Dislocation

KW - GaN

KW - ITO contact

KW - LEDs

KW - Leakage

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DO - 10.1143/JJAP.44.7424

M3 - Article

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EP - 7426

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10

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Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes

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Keywords

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