Theory of Electron Impact Ionization Including a Potential Step: Application to GaAs-AlGaAs

K. Brennan, T. Wang, K. Hess

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

A Monte Carlo simulation of the electron impact ionization enhancement by a Kronig-Penney superlattice is presented. The results are compared to measured ionization coefficients of a GaAs/AlGaAs superlattice structure. The theory confirms the predicted and measured enhancement of the electron ionization rate. A quantitative fit of the theoretical data to the experimental results suggests a conduction-band offset in the GaAs/AlGaAs system which is roughly equal to 75 percent.

Original languageEnglish
Pages (from-to)199-201
Number of pages3
JournalIeee Electron Device Letters
Volume6
Issue number4
DOIs
StatePublished - Apr 1985

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