Theoretical study on geometry and temperature effects of thermoelectric properties of Si and Ge nanowires

Wen Huang*, Chee Shin Koong, Gengchiau Liang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Thermoelectric properties of Si and Ge nanowires are studied theoretically using sp3d5s* tight-binding and ballistic transport approach. We found that the Seebeck coefficient and power factor per area depend on the nanowire size and its orientation. In addition, for nano-scale nanowires, cross-sectional shape effect is considerable and transmission mode dominates the performance. Temperature also has a great impact on the thermoelectric performance of nanowires. The power factor of Si nanowires along different orientations is approaching to the same value as temperature growing higher than 300 K; while power factor of Ge nanowires along [100] is the largest at high temperature, but the smallest at extreme low temperature.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages1832-1834
Number of pages3
DOIs
StatePublished - 2010
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 1 Nov 20104 Nov 2010

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/TerritoryChina
CityShanghai
Period1/11/104/11/10

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