The zinc-loss effect and mobility enhancement of DUV-patterned sol-gel IGZO thin-film transistors

Kuan Hsun Wang, Hsiao-Wen Zan*, Olivier Soppera

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We investigate the composition of the DUV-patterned sol-gel indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) and observe a significant zinc loss effect during developing when the DUV exposure is insufficient. The zinc loss, however, is beneficial for increasing the mobility. Reducing zinc to indium composition ratio from 0.5 to 0.02 can effectively increase mobility from 0.27 to 7.30 cm2 V-1 s-1 when the gallium to indium ratio is fixed as 0.25 and the post annealing process is fixed as 300 °C for 2 h. On the other hand, an IGO TFT fails to deliver a uniform film and a reproducible TFT performance, revealing the critical role of zinc in forming homogeneous IGZO TFTs.

Original languageEnglish
Article number035003
JournalSemiconductor Science and Technology
Volume33
Issue number3
DOIs
StatePublished - 31 Jan 2018

Keywords

  • DUV
  • IGZO
  • photo-patterning
  • sol-gel
  • zinc loss

Fingerprint

Dive into the research topics of 'The zinc-loss effect and mobility enhancement of DUV-patterned sol-gel IGZO thin-film transistors'. Together they form a unique fingerprint.

Cite this