The wonderful world of designer Ge quantum dots

I. Hsiang Wang, Po Yu Hong, Kang Ping Peng, Horng Chih Lin, Thomas George, Pei Wen Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations


Starting with our remarkable discovery of spherical germanium (Ge) quantum dot (QD) formation, we have embarked on an exciting journey of further discovery, all the while maintaining CMOS-compatible processes. We have taken advantage of the many peculiar and symbiotic interactions of Si, Ge and O interstitials to create a novel portfolio of electronic, photonic and quantum computing devices. This paper summarizes several of these completely new and counter-intuitive accomplishments. Using a coordinated combination of lithographic patterning and self-assembly, size-tunable spherical Ge QDs were controllably placed at designated spatial locations within Si-containing layers. We exploited the exquisite control available through the thermal oxidation of Si1-xGex patterned structures in proximity to Si3N4/Si layers. Our so-called "designer"Ge QDs have succeeded in opening up myriad device possibilities, including paired QDs for qubits, single-hole transistors (SHTs) for charge sensing, photodetectors and light-emitters for Si photonics, and junctionless (JL) FETs using standard Si processing.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728188881
StatePublished - 12 Dec 2020
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 12 Dec 202018 Dec 2020

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/TerritoryUnited States
CityVirtual, San Francisco


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