The Transition Behavior of Power LDNMOS at the ON-OFF Transient During Unclamped Inductive-Switching (UIS) Test

Jian Hsing Lee*, Chih Cherng Liao, Gong Kai Lin, Karuna Nidhi*, Chieh Yao Chuang, Shao Chang Huang, Ke Horng Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Although the unclamped inductive-switching (UIS) test is commonly used to estimate the ruggedness capability of a power transistor, the transition behavior of the transistor at the ON-OFF transient state is never discussed until now. From the fundamental physics, the inductor current cannot be changed instantaneously. In this article, how the transistor provides the current to keep the inductor current flowing at the transition state of the UIS test in which the gate voltage is pulled down and the drain voltage still does not rise to the breakdown voltage is investigated. From the measurement and T-CAD simulation, it shows that the inductor current can keep constant at the ON-OFF transient of power transistor during the UIS test which can be attributed to the channel current due to ground bounce, displacement current at the rising time, and electrons/holes leaving the depletion region when the depletion width increases with drain voltage at the rising time.

Original languageEnglish
Pages (from-to)4247-4252
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume71
Issue number7
DOIs
StatePublished - 1 Jul 2024

Keywords

  • Ground bounce
  • lateral-diffused metal-oxide semiconductor (LDMOS)
  • unclamped inductive-switching (UIS)

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