The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors

C. K. Wang; T. K. Ko; C. S. Chang; S. J. Chang; Y. K. Su; T. C. Wen; Cheng-Huang Kuo; Y. Z. Chiou

doi:10.1109/LPT.2005.854358

The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors

C. K. Wang^*, T. K. Ko, C. S. Chang, S. J. Chang, Y. K. Su, T. C. Wen, Cheng-Huang Kuo, Y. Z. Chiou

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

By means of 60-, 150-, and 300-nm-thick blocking p-Al_0.1 Ga_0.9N layers, we have successfully achieved high performance on nitride-based p-i-n bandpass photodetectors. The peak responsivities were estimated to be 0.131, 0.129, and 0.13 A/W at 354, 357, and 356 nm for 60-, 150-, and 300-nm-thick p-Al_0.1Ga_0.9N blocking layer, respectively, corresponding to a quantum efficiency of around 46%. Moreover, spectral responsivity for 300-nm-thick blocking p-Al_0.1Ga_0.9N layer shows the narrowest bandpass characteristics from 320 to 365 nm (UV-A region). The photodetectors exhibit a 20-V break-down voltage and a small dark current of around 3 pA at 5-V reverse bias. For our 330 × 330 μm² devices given bias of 0 V, the detectivity D* limited by Johnson noise are calculated to be 3.43 × 10¹³ 6.77 × 10¹³, and 8.22 × 10¹³ cm - Hz^0.5 W^-1, respectively.

Original language	English
Pages (from-to)	2161-2163
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2005.854358
State	Published - 1 Oct 2005

Keywords

AIGaN-GaN
Band-pass
Noise
P-i-n
Photodetector

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@article{ad08efa58344477abfba6b45064688ad,

title = "The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors",

abstract = "By means of 60-, 150-, and 300-nm-thick blocking p-Al0.1 Ga0.9N layers, we have successfully achieved high performance on nitride-based p-i-n bandpass photodetectors. The peak responsivities were estimated to be 0.131, 0.129, and 0.13 A/W at 354, 357, and 356 nm for 60-, 150-, and 300-nm-thick p-Al0.1Ga0.9N blocking layer, respectively, corresponding to a quantum efficiency of around 46%. Moreover, spectral responsivity for 300-nm-thick blocking p-Al0.1Ga0.9N layer shows the narrowest bandpass characteristics from 320 to 365 nm (UV-A region). The photodetectors exhibit a 20-V break-down voltage and a small dark current of around 3 pA at 5-V reverse bias. For our 330 × 330 μm2 devices given bias of 0 V, the detectivity D* limited by Johnson noise are calculated to be 3.43 × 1013 6.77 × 1013, and 8.22 × 1013 cm - Hz0.5 W-1, respectively.",

keywords = "AIGaN-GaN, Band-pass, Noise, P-i-n, Photodetector",

author = "Wang, {C. K.} and Ko, {T. K.} and Chang, {C. S.} and Chang, {S. J.} and Su, {Y. K.} and Wen, {T. C.} and Cheng-Huang Kuo and Chiou, {Y. Z.}",

year = "2005",

month = oct,

day = "1",

doi = "10.1109/LPT.2005.854358",

language = "English",

volume = "17",

pages = "2161--2163",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors

AU - Wang, C. K.

AU - Ko, T. K.

AU - Chang, C. S.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wen, T. C.

AU - Kuo, Cheng-Huang

AU - Chiou, Y. Z.

PY - 2005/10/1

Y1 - 2005/10/1

N2 - By means of 60-, 150-, and 300-nm-thick blocking p-Al0.1 Ga0.9N layers, we have successfully achieved high performance on nitride-based p-i-n bandpass photodetectors. The peak responsivities were estimated to be 0.131, 0.129, and 0.13 A/W at 354, 357, and 356 nm for 60-, 150-, and 300-nm-thick p-Al0.1Ga0.9N blocking layer, respectively, corresponding to a quantum efficiency of around 46%. Moreover, spectral responsivity for 300-nm-thick blocking p-Al0.1Ga0.9N layer shows the narrowest bandpass characteristics from 320 to 365 nm (UV-A region). The photodetectors exhibit a 20-V break-down voltage and a small dark current of around 3 pA at 5-V reverse bias. For our 330 × 330 μm2 devices given bias of 0 V, the detectivity D* limited by Johnson noise are calculated to be 3.43 × 1013 6.77 × 1013, and 8.22 × 1013 cm - Hz0.5 W-1, respectively.

AB - By means of 60-, 150-, and 300-nm-thick blocking p-Al0.1 Ga0.9N layers, we have successfully achieved high performance on nitride-based p-i-n bandpass photodetectors. The peak responsivities were estimated to be 0.131, 0.129, and 0.13 A/W at 354, 357, and 356 nm for 60-, 150-, and 300-nm-thick p-Al0.1Ga0.9N blocking layer, respectively, corresponding to a quantum efficiency of around 46%. Moreover, spectral responsivity for 300-nm-thick blocking p-Al0.1Ga0.9N layer shows the narrowest bandpass characteristics from 320 to 365 nm (UV-A region). The photodetectors exhibit a 20-V break-down voltage and a small dark current of around 3 pA at 5-V reverse bias. For our 330 × 330 μm2 devices given bias of 0 V, the detectivity D* limited by Johnson noise are calculated to be 3.43 × 1013 6.77 × 1013, and 8.22 × 1013 cm - Hz0.5 W-1, respectively.

KW - AIGaN-GaN

KW - Band-pass

KW - Noise

KW - P-i-n

KW - Photodetector

UR - http://www.scopus.com/inward/record.url?scp=26844462321&partnerID=8YFLogxK

U2 - 10.1109/LPT.2005.854358

DO - 10.1109/LPT.2005.854358

M3 - Article

AN - SCOPUS:26844462321

SN - 1041-1135

VL - 17

SP - 2161

EP - 2163

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

ER -

The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors

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