The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition

S. F. Fu; S. M. Wang; L. Lee; C. Y. Chen; W. C. Tsai; Wu-Ching Chou; M. C. Lee; Wen-Hao Chang; Wei-Kuo Chen

doi:10.1088/0957-4484/20/29/295702

The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition

S. F. Fu, S. M. Wang, L. Lee, C. Y. Chen, W. C. Tsai, Wu-Ching Chou, M. C. Lee, Wen-Hao Chang, Wei-Kuo Chen

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Self-assembled InN nanodots have been prepared at 650 °C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12 000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.

Original language	English
Article number	295702
Pages (from-to)	1-4
Number of pages	4
Journal	Nanotechnology
Volume	20
Issue number	29
DOIs	https://doi.org/10.1088/0957-4484/20/29/295702
State	Published - 22 Jul 2009

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title = "The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition",

abstract = "Self-assembled InN nanodots have been prepared at 650 °C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12 000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.",

author = "Fu, {S. F.} and Wang, {S. M.} and L. Lee and Chen, {C. Y.} and Tsai, {W. C.} and Wu-Ching Chou and Lee, {M. C.} and Wen-Hao Chang and Wei-Kuo Chen",

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doi = "10.1088/0957-4484/20/29/295702",

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T1 - The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition

AU - Fu, S. F.

AU - Wang, S. M.

AU - Lee, L.

AU - Chen, C. Y.

AU - Tsai, W. C.

AU - Chou, Wu-Ching

AU - Lee, M. C.

AU - Chang, Wen-Hao

AU - Chen, Wei-Kuo

PY - 2009/7/22

Y1 - 2009/7/22

N2 - Self-assembled InN nanodots have been prepared at 650 °C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12 000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.

AB - Self-assembled InN nanodots have been prepared at 650 °C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12 000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.

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U2 - 10.1088/0957-4484/20/29/295702

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ER -

The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition

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